Enhancement of critical current density in MgB2 bulk superconductor by Ti doping

Y. Zhao; Y. Feng; T. Machi; C. H. Cheng; D. X. Huang; Y. Fudamoto; N. Koshizuka; M. Murakami

doi:10.1209/epl/i2002-00479-1

Enhancement of critical current density in MgB₂ bulk superconductor by Ti doping

Y. Zhao, Y. Feng, T. Machi, C. H. Cheng, D. X. Huang, Y. Fudamoto, N. Koshizuka, M. Murakami

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We studied the Ti doping effect on the superconducting properties and microstructure of sintered MgB₂ bulk polycrystals. Using Ti as a sintering assistant, we have fabricated MgB₂ bulk materials consisting of fine 10 nm scale particles and achieved a high J_c of 1 MA/cm² in self-field and 3 × 10⁵ A/cm² in 1 T at 20 K. The large enhancement of J_c is explained by the excellent connection between grains and the high density of pinning centers served by both grain boundaries and MgO nanoparticles.

Original language	English
Pages (from-to)	437-443
Number of pages	7
Journal	Europhysics Letters
Volume	57
Issue number	3
DOIs	https://doi.org/10.1209/epl/i2002-00479-1
Publication status	Published - 2002
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1209/epl/i2002-00479-1

Cite this

@article{b9b984eeb7e64641831c3cb380e0fb1b,

title = "Enhancement of critical current density in MgB2 bulk superconductor by Ti doping",

abstract = "We studied the Ti doping effect on the superconducting properties and microstructure of sintered MgB2 bulk polycrystals. Using Ti as a sintering assistant, we have fabricated MgB2 bulk materials consisting of fine 10 nm scale particles and achieved a high Jc of 1 MA/cm2 in self-field and 3 × 105 A/cm2 in 1 T at 20 K. The large enhancement of Jc is explained by the excellent connection between grains and the high density of pinning centers served by both grain boundaries and MgO nanoparticles.",

author = "Y. Zhao and Y. Feng and T. Machi and Cheng, {C. H.} and Huang, {D. X.} and Y. Fudamoto and N. Koshizuka and M. Murakami",

year = "2002",

doi = "10.1209/epl/i2002-00479-1",

language = "English",

volume = "57",

pages = "437--443",

journal = "EPL",

issn = "0295-5075",

publisher = "IOP Publishing Ltd.",

number = "3",

}

TY - JOUR

T1 - Enhancement of critical current density in MgB2 bulk superconductor by Ti doping

AU - Zhao, Y.

AU - Feng, Y.

AU - Machi, T.

AU - Cheng, C. H.

AU - Huang, D. X.

AU - Fudamoto, Y.

AU - Koshizuka, N.

AU - Murakami, M.

PY - 2002

Y1 - 2002

N2 - We studied the Ti doping effect on the superconducting properties and microstructure of sintered MgB2 bulk polycrystals. Using Ti as a sintering assistant, we have fabricated MgB2 bulk materials consisting of fine 10 nm scale particles and achieved a high Jc of 1 MA/cm2 in self-field and 3 × 105 A/cm2 in 1 T at 20 K. The large enhancement of Jc is explained by the excellent connection between grains and the high density of pinning centers served by both grain boundaries and MgO nanoparticles.

AB - We studied the Ti doping effect on the superconducting properties and microstructure of sintered MgB2 bulk polycrystals. Using Ti as a sintering assistant, we have fabricated MgB2 bulk materials consisting of fine 10 nm scale particles and achieved a high Jc of 1 MA/cm2 in self-field and 3 × 105 A/cm2 in 1 T at 20 K. The large enhancement of Jc is explained by the excellent connection between grains and the high density of pinning centers served by both grain boundaries and MgO nanoparticles.

UR - http://www.scopus.com/inward/record.url?scp=0036340255&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036340255&partnerID=8YFLogxK

U2 - 10.1209/epl/i2002-00479-1

DO - 10.1209/epl/i2002-00479-1

M3 - Article

AN - SCOPUS:0036340255

VL - 57

SP - 437

EP - 443

JO - EPL

JF - EPL

SN - 0295-5075

IS - 3

ER -

Enhancement of critical current density in MgB₂ bulk superconductor by Ti doping

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this