Abstract
Enhancement of local electric conductivities induced by femtosecond laser modification in silicon carbide was studied. Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts. Interestingly, the resistance sharply decreased in the fluence range from 5.0 to 6.7 J/ cm2. The resistance at the irradiation fluence of 53 J/ cm2 decreased by more than six orders of magnitude compared with the nonirradiated one. From the I-V characteristics and the scanning electron microscope observations, we conclude that the phase separation associate with the formation of classical laser induced periodic structure causes the drastic increase in electric conductivity.
| Original language | English |
|---|---|
| Article number | 133104 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2011 Mar 28 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Enhancement of local electrical conductivities in SiC by femtosecond laser modification. / Deki, Manato; Ito, Takuto; Yamamoto, Minoru; Tomita, Takuro; Matsuo, Shigeki; Hashimoto, Shuichi; Kitada, Takahiro; Isu, Toshiro; Onoda, Shinobu; Ohshima, Takeshi.
In: Applied Physics Letters, Vol. 98, No. 13, 133104, 28.03.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Enhancement of local electrical conductivities in SiC by femtosecond laser modification
AU - Deki, Manato
AU - Ito, Takuto
AU - Yamamoto, Minoru
AU - Tomita, Takuro
AU - Matsuo, Shigeki
AU - Hashimoto, Shuichi
AU - Kitada, Takahiro
AU - Isu, Toshiro
AU - Onoda, Shinobu
AU - Ohshima, Takeshi
PY - 2011/3/28
Y1 - 2011/3/28
N2 - Enhancement of local electric conductivities induced by femtosecond laser modification in silicon carbide was studied. Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts. Interestingly, the resistance sharply decreased in the fluence range from 5.0 to 6.7 J/ cm2. The resistance at the irradiation fluence of 53 J/ cm2 decreased by more than six orders of magnitude compared with the nonirradiated one. From the I-V characteristics and the scanning electron microscope observations, we conclude that the phase separation associate with the formation of classical laser induced periodic structure causes the drastic increase in electric conductivity.
AB - Enhancement of local electric conductivities induced by femtosecond laser modification in silicon carbide was studied. Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts. Interestingly, the resistance sharply decreased in the fluence range from 5.0 to 6.7 J/ cm2. The resistance at the irradiation fluence of 53 J/ cm2 decreased by more than six orders of magnitude compared with the nonirradiated one. From the I-V characteristics and the scanning electron microscope observations, we conclude that the phase separation associate with the formation of classical laser induced periodic structure causes the drastic increase in electric conductivity.
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UR - http://www.scopus.com/inward/citedby.url?scp=79953757851&partnerID=8YFLogxK
U2 - 10.1063/1.3573786
DO - 10.1063/1.3573786
M3 - Article
VL - 98
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
M1 - 133104
ER -