Enhancement of local electrical conductivities in SiC by femtosecond laser modification

Manato Deki, Takuto Ito, Minoru Yamamoto, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Takahiro Kitada, Toshiro Isu, Shinobu Onoda, Takeshi Ohshima

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Enhancement of local electric conductivities induced by femtosecond laser modification in silicon carbide was studied. Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts. Interestingly, the resistance sharply decreased in the fluence range from 5.0 to 6.7 J/ cm2. The resistance at the irradiation fluence of 53 J/ cm2 decreased by more than six orders of magnitude compared with the nonirradiated one. From the I-V characteristics and the scanning electron microscope observations, we conclude that the phase separation associate with the formation of classical laser induced periodic structure causes the drastic increase in electric conductivity.

Original languageEnglish
Article number133104
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2011 Mar 28
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Deki, M., Ito, T., Yamamoto, M., Tomita, T., Matsuo, S., Hashimoto, S., ... Ohshima, T. (2011). Enhancement of local electrical conductivities in SiC by femtosecond laser modification. Applied Physics Letters, 98(13), [133104]. https://doi.org/10.1063/1.3573786