Enhancement of local electrical conductivities in SiC by femtosecond laser modification

Manato Deki; Takuto Ito; Minoru Yamamoto; Takuro Tomita; Shigeki Matsuo; Shuichi Hashimoto; Takahiro Kitada; Toshiro Isu; Shinobu Onoda; Takeshi Ohshima

doi:10.1063/1.3573786

Enhancement of local electrical conductivities in SiC by femtosecond laser modification

Manato Deki, Takuto Ito, Minoru Yamamoto, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Takahiro Kitada, Toshiro Isu, Shinobu Onoda, Takeshi Ohshima

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Enhancement of local electric conductivities induced by femtosecond laser modification in silicon carbide was studied. Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts. Interestingly, the resistance sharply decreased in the fluence range from 5.0 to 6.7 J/ cm². The resistance at the irradiation fluence of 53 J/ cm² decreased by more than six orders of magnitude compared with the nonirradiated one. From the I-V characteristics and the scanning electron microscope observations, we conclude that the phase separation associate with the formation of classical laser induced periodic structure causes the drastic increase in electric conductivity.

Original language	English
Article number	133104
Journal	Applied Physics Letters
Volume	98
Issue number	13
DOIs	https://doi.org/10.1063/1.3573786
Publication status	Published - 2011 Mar 28
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3573786

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Enhancement of local electrical conductivities in SiC by femtosecond laser modification. / Deki, Manato; Ito, Takuto; Yamamoto, Minoru; Tomita, Takuro; Matsuo, Shigeki; Hashimoto, Shuichi; Kitada, Takahiro; Isu, Toshiro; Onoda, Shinobu; Ohshima, Takeshi.

In: Applied Physics Letters, Vol. 98, No. 13, 133104, 28.03.2011.

Research output: Contribution to journal › Article › peer-review

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abstract = "Enhancement of local electric conductivities induced by femtosecond laser modification in silicon carbide was studied. Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts. Interestingly, the resistance sharply decreased in the fluence range from 5.0 to 6.7 J/ cm2. The resistance at the irradiation fluence of 53 J/ cm2 decreased by more than six orders of magnitude compared with the nonirradiated one. From the I-V characteristics and the scanning electron microscope observations, we conclude that the phase separation associate with the formation of classical laser induced periodic structure causes the drastic increase in electric conductivity.",

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note = "Funding Information: We acknowledge Mr. Naoya Iwamoto at JAEA (and also The University of Electro-Communications) for helpful assistance regarding implantation and Al evaporation. This research is partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology (Grant No. 19760035) and the MURATA science foundation.",

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AU - Hashimoto, Shuichi

AU - Kitada, Takahiro

AU - Isu, Toshiro

AU - Onoda, Shinobu

AU - Ohshima, Takeshi

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N2 - Enhancement of local electric conductivities induced by femtosecond laser modification in silicon carbide was studied. Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts. Interestingly, the resistance sharply decreased in the fluence range from 5.0 to 6.7 J/ cm2. The resistance at the irradiation fluence of 53 J/ cm2 decreased by more than six orders of magnitude compared with the nonirradiated one. From the I-V characteristics and the scanning electron microscope observations, we conclude that the phase separation associate with the formation of classical laser induced periodic structure causes the drastic increase in electric conductivity.

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Enhancement of local electrical conductivities in SiC by femtosecond laser modification

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