Enhancement of Magneto Optic Effect in Optical Isolator with GaInAsP Guiding Layer by Selective Oxidation of AlInAs

Yuya Shoji, Hideki Yokoi, Tetsuya Mizumoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A selectively oxidized AlInAs layer with low refractive index can enhance the magneto optic effect and improve the characteristics of optical nonreciprocal devices. We successfully fabricated an optical waveguide with an AlInAs oxide lower cladding layer. The refractive index of the AlInAs oxide was determined to be 2.45 at λ = 1.55 μm. The optical nonreciprocal phase shift of this waveguide was more than twelvefold than that of the magneto optic waveguide with an InP cladding layer.

Original languageEnglish
Pages (from-to)590-593
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number2
Publication statusPublished - 2004 Feb
Externally publishedYes

Fingerprint

Magnetooptical effects
isolators
magneto-optics
Refractive index
Waveguides
Oxidation
oxidation
Oxides
augmentation
Optical waveguides
Optical devices
Phase shift
refractivity
waveguides
oxides
optical waveguides
phase shift

Keywords

  • Direct bonding
  • Optical Isolator
  • Selective oxidation
  • Semiconductor

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{abd5fce7f32b43d78cd8d01a05277f88,
title = "Enhancement of Magneto Optic Effect in Optical Isolator with GaInAsP Guiding Layer by Selective Oxidation of AlInAs",
abstract = "A selectively oxidized AlInAs layer with low refractive index can enhance the magneto optic effect and improve the characteristics of optical nonreciprocal devices. We successfully fabricated an optical waveguide with an AlInAs oxide lower cladding layer. The refractive index of the AlInAs oxide was determined to be 2.45 at λ = 1.55 μm. The optical nonreciprocal phase shift of this waveguide was more than twelvefold than that of the magneto optic waveguide with an InP cladding layer.",
keywords = "Direct bonding, Optical Isolator, Selective oxidation, Semiconductor",
author = "Yuya Shoji and Hideki Yokoi and Tetsuya Mizumoto",
year = "2004",
month = "2",
language = "English",
volume = "43",
pages = "590--593",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "2",

}

TY - JOUR

T1 - Enhancement of Magneto Optic Effect in Optical Isolator with GaInAsP Guiding Layer by Selective Oxidation of AlInAs

AU - Shoji, Yuya

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

PY - 2004/2

Y1 - 2004/2

N2 - A selectively oxidized AlInAs layer with low refractive index can enhance the magneto optic effect and improve the characteristics of optical nonreciprocal devices. We successfully fabricated an optical waveguide with an AlInAs oxide lower cladding layer. The refractive index of the AlInAs oxide was determined to be 2.45 at λ = 1.55 μm. The optical nonreciprocal phase shift of this waveguide was more than twelvefold than that of the magneto optic waveguide with an InP cladding layer.

AB - A selectively oxidized AlInAs layer with low refractive index can enhance the magneto optic effect and improve the characteristics of optical nonreciprocal devices. We successfully fabricated an optical waveguide with an AlInAs oxide lower cladding layer. The refractive index of the AlInAs oxide was determined to be 2.45 at λ = 1.55 μm. The optical nonreciprocal phase shift of this waveguide was more than twelvefold than that of the magneto optic waveguide with an InP cladding layer.

KW - Direct bonding

KW - Optical Isolator

KW - Selective oxidation

KW - Semiconductor

UR - http://www.scopus.com/inward/record.url?scp=2142808860&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2142808860&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:2142808860

VL - 43

SP - 590

EP - 593

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2

ER -