Enhancing Critical Current Density of Bulk MgB2 via Nanoscale Boron and Dy2O3 Doping

Muralidhar Miryala, Kotaro Kitamoto, Sai Srikanth Arvapalli, Dhruba Das, Milos Jirsa, Masato Murakami, Sri Ramachandra Rao Mamidanna

Research output: Contribution to journalArticlepeer-review

Abstract

Moderate critical current density (Jc) has been a long-lasting problem in bulk MgB2 superconductors. We show a certain increment in Jc of bulk MgB2 via the use of amorphous boron precursor together with Dy2O3 doping. Dy2O3 dopant concentration varies from 0 to 2 wt%. X-Ray diffraction (XRD) shows the formation of DyB4 particles. The critical temperature (Tc) is not affected by Dy2O3 doping and stands close to 38 K, showing that there is no Dy interaction with the MgB2 lattice. Microstructural studies show nanometer-sized MgB2 grains. A high self-field Jc of around 380 kA cm−2 is achieved at 20 K within the Dy2O3 doping range of 0.5–1.5 wt%. At around 1 wt% Dy2O3 doping an improved high-field performance, 90 kA cm−2 at 2 T, 20 K, is observed. In the flux pinning diagram, 1 wt% Dy2O3 doping caused a peak shift from 0.19 (0 wt%) to 0.23. This indicates secondary pinning by DyB4 and lattice strains. Raman studies show the increase in the phonon density of states (PDOS) with increasing Dy2O3 doping.

Original languageEnglish
Article number2200487
JournalAdvanced Engineering Materials
Volume24
Issue number11
DOIs
Publication statusPublished - 2022 Nov
Externally publishedYes

Keywords

  • DyO doping
  • MgB
  • Raman spectroscopy
  • critical current density (J)
  • flux pinning
  • nanoscale boron

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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