Epitaxial Al Schottky contacts formed on (111) GaAs

Kazuyoshi Ueno, Takayoshi Yoshida, Kazuyuki Hirose

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and capacitance-voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N2 atmosphere.

Original languageEnglish
Pages (from-to)2204-2206
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number22
DOIs
Publication statusPublished - 1990
Externally publishedYes

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electric contacts
electric potential
molecular beam epitaxy
capacitance
atmospheres
transmission electron microscopy
annealing

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial Al Schottky contacts formed on (111) GaAs. / Ueno, Kazuyoshi; Yoshida, Takayoshi; Hirose, Kazuyuki.

In: Applied Physics Letters, Vol. 56, No. 22, 1990, p. 2204-2206.

Research output: Contribution to journalArticle

Ueno, Kazuyoshi ; Yoshida, Takayoshi ; Hirose, Kazuyuki. / Epitaxial Al Schottky contacts formed on (111) GaAs. In: Applied Physics Letters. 1990 ; Vol. 56, No. 22. pp. 2204-2206.
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