Epitaxial growth of Ba 8 Ga 16 Ge 30 clathrate film on Si substrate by RF helicon magnetron sputtering with evaluation on thermoelectric properties

L. Miao, S. Tanemura, T. Watanabe, M. Tanemura, S. Toh, K. Kaneko, Y. Sugahara, T. Hirayama

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Epitaxial Ba 8 Ga 16 Ge 30 clathrate thin films were successfully grown on Si substrate by using helicon magnetron sputtering. The (1 0 0) lattice of Ba 8 Ga 16 Ge 30 was identified grown on four Si(2 0 0) lattices in small mismatch (0.1%). Both the color of samples and XRD results suggest 600 °C is the optimal substrate temperature for the growth of high quality Ba-Ga-Ge clathrate film on Si substrates. High Seebeck coefficients and electrical resistivities for the deposited clathrate thin films in comparison with those of bulk are obtained. The high crystal quality and thermionic effects in heterostructures may contribute to the larger Seebeck coefficients, while the increasing of interface scattering for electrons probably is the reason for large electrical resistivities. Although the thermoelectric (TE) results are not ideal as designed, our results are significant due to the first successful work on epitaxial growth of Ba 8 Ga 16 Ge 30 clathrate thin films on Si substrate with large Seebeck coefficient.

Original languageEnglish
Pages (from-to)167-172
Number of pages6
JournalApplied Surface Science
Volume254
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Oct 31
Externally publishedYes

Keywords

  • Clathrate
  • Epitaxial growth
  • Sputtering
  • Thermoelectric properties
  • Thin film

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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