Evaluation of microscopic structural randomness in SiO2 by analysis of photoluminescence decay profiles

Keisuke Ishii, Kwang Soo Seol, Yoshimichi Ohki, Hiroyuki Nishikawa

Research output: Contribution to journalArticlepeer-review


Microscopic structural randomness in SiO2, a typical electrical insulating material, was evaluated by observing the decay profile of the photoluminescence due to oxygen vacancies (≡Si-Si≡). As samples with different degrees of randomness, an ion-implanted thermal SiO2 film, SiO2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane with and without doped fluorine, a buried oxide film prepared by SIMOX (separation by ion-implanted oxygen), and a bulk silica glass prepared by the soot-remelting method were tested. By analyzing the decay profile with a stretched exponential function, it was found that the deviation of the decay profile from a single exponential function is larger in the samples whose infrared absorption properties and HF etch rate suggest greater structural randomness.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
Issue number3
Publication statusPublished - 1997
Externally publishedYes


  • Decay profile
  • Oxygen vacancy
  • Photoluminescence
  • Stretched exponential function
  • Structural randomness

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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