Evaluation of silica glasses implanted by high-energy ions using a UV-excited microspectroscopy

T. Yamaguchi, E. Watanabe, T. Souno, Hiroyuki Nishikawa, M. Hattori, Y. Ohki, T. Kamiya, K. Arakawa

Research output: Contribution to journalArticle

Abstract

In this study, defects induced by ion implantation were investigated by a photoluminescence (PL) microspectroscopy. When H+ or He2+ with high energy (∼MeV) were implanted into silica, two PL bands at 290 and 650 nm were observed under 244 nm excitation. The PL bands at 290 and 650 nm were ascribed to oxygen deficient centers and nonbridging oxygen hole centers, respectively. The PL depth profile analysis shows that these PL centers are distributed throughout the tracks of ions, while they are quenched in the proximity of their projected ranges. Based on the observation on the PL profiles, the formation of the PL centers was ascribed to the energy deposition by electronic stopping power. The role of nuclear stopping power on the defect formation is also discussed.

Original languageEnglish
Pages (from-to)371-374
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume191
Issue number1-4
DOIs
Publication statusPublished - 2002 May

Fingerprint

silica glass
Fused silica
Photoluminescence
Ions
photoluminescence
evaluation
ions
stopping power
energy
Oxygen
Defects
defects
oxygen
profiles
Power electronics
Ion implantation
Silicon Dioxide
Nuclear energy
ion implantation
proximity

Keywords

  • Ion implantation
  • Microspectroscopy
  • Photoluminescence
  • Silica glass

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Evaluation of silica glasses implanted by high-energy ions using a UV-excited microspectroscopy. / Yamaguchi, T.; Watanabe, E.; Souno, T.; Nishikawa, Hiroyuki; Hattori, M.; Ohki, Y.; Kamiya, T.; Arakawa, K.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 191, No. 1-4, 05.2002, p. 371-374.

Research output: Contribution to journalArticle

@article{e145feb51c204c2b952ba444bae755d6,
title = "Evaluation of silica glasses implanted by high-energy ions using a UV-excited microspectroscopy",
abstract = "In this study, defects induced by ion implantation were investigated by a photoluminescence (PL) microspectroscopy. When H+ or He2+ with high energy (∼MeV) were implanted into silica, two PL bands at 290 and 650 nm were observed under 244 nm excitation. The PL bands at 290 and 650 nm were ascribed to oxygen deficient centers and nonbridging oxygen hole centers, respectively. The PL depth profile analysis shows that these PL centers are distributed throughout the tracks of ions, while they are quenched in the proximity of their projected ranges. Based on the observation on the PL profiles, the formation of the PL centers was ascribed to the energy deposition by electronic stopping power. The role of nuclear stopping power on the defect formation is also discussed.",
keywords = "Ion implantation, Microspectroscopy, Photoluminescence, Silica glass",
author = "T. Yamaguchi and E. Watanabe and T. Souno and Hiroyuki Nishikawa and M. Hattori and Y. Ohki and T. Kamiya and K. Arakawa",
year = "2002",
month = "5",
doi = "10.1016/S0168-583X(02)00540-2",
language = "English",
volume = "191",
pages = "371--374",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Evaluation of silica glasses implanted by high-energy ions using a UV-excited microspectroscopy

AU - Yamaguchi, T.

AU - Watanabe, E.

AU - Souno, T.

AU - Nishikawa, Hiroyuki

AU - Hattori, M.

AU - Ohki, Y.

AU - Kamiya, T.

AU - Arakawa, K.

PY - 2002/5

Y1 - 2002/5

N2 - In this study, defects induced by ion implantation were investigated by a photoluminescence (PL) microspectroscopy. When H+ or He2+ with high energy (∼MeV) were implanted into silica, two PL bands at 290 and 650 nm were observed under 244 nm excitation. The PL bands at 290 and 650 nm were ascribed to oxygen deficient centers and nonbridging oxygen hole centers, respectively. The PL depth profile analysis shows that these PL centers are distributed throughout the tracks of ions, while they are quenched in the proximity of their projected ranges. Based on the observation on the PL profiles, the formation of the PL centers was ascribed to the energy deposition by electronic stopping power. The role of nuclear stopping power on the defect formation is also discussed.

AB - In this study, defects induced by ion implantation were investigated by a photoluminescence (PL) microspectroscopy. When H+ or He2+ with high energy (∼MeV) were implanted into silica, two PL bands at 290 and 650 nm were observed under 244 nm excitation. The PL bands at 290 and 650 nm were ascribed to oxygen deficient centers and nonbridging oxygen hole centers, respectively. The PL depth profile analysis shows that these PL centers are distributed throughout the tracks of ions, while they are quenched in the proximity of their projected ranges. Based on the observation on the PL profiles, the formation of the PL centers was ascribed to the energy deposition by electronic stopping power. The role of nuclear stopping power on the defect formation is also discussed.

KW - Ion implantation

KW - Microspectroscopy

KW - Photoluminescence

KW - Silica glass

UR - http://www.scopus.com/inward/record.url?scp=0036574332&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036574332&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(02)00540-2

DO - 10.1016/S0168-583X(02)00540-2

M3 - Article

VL - 191

SP - 371

EP - 374

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -