Evaluation of silica glasses implanted by high-energy ions using a UV-excited microspectroscopy

T. Yamaguchi, E. Watanabe, T. Souno, H. Nishikawa, M. Hattori, Y. Ohki, T. Kamiya, K. Arakawa

Research output: Contribution to journalArticle

Abstract

In this study, defects induced by ion implantation were investigated by a photoluminescence (PL) microspectroscopy. When H+ or He2+ with high energy (∼MeV) were implanted into silica, two PL bands at 290 and 650 nm were observed under 244 nm excitation. The PL bands at 290 and 650 nm were ascribed to oxygen deficient centers and nonbridging oxygen hole centers, respectively. The PL depth profile analysis shows that these PL centers are distributed throughout the tracks of ions, while they are quenched in the proximity of their projected ranges. Based on the observation on the PL profiles, the formation of the PL centers was ascribed to the energy deposition by electronic stopping power. The role of nuclear stopping power on the defect formation is also discussed.

Original languageEnglish
Pages (from-to)371-374
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume191
Issue number1-4
DOIs
Publication statusPublished - 2002 May

Keywords

  • Ion implantation
  • Microspectroscopy
  • Photoluminescence
  • Silica glass

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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