Evaluation of SiO2 thin films prepared by sol-gel method using photoirradiation

S. Maekawa; T. Ohishi

doi:10.1016/0022-3093(94)90241-0

Evaluation of SiO₂ thin films prepared by sol-gel method using photoirradiation

S. Maekawa, T. Ohishi

Research output: Contribution to journal › Letter › peer-review

31 Citations (Scopus)

Abstract

SiO₂ films were prepared by the sol-gel method using photoirradiation, and the properties microhardness and HF etch rate, etc., were evaluated. The hardness and anti-corrosion in HF of photoirradiated films were superior to films only heated at the same temperature.

Original language	English
Pages (from-to)	207-209
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	169
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-3093(94)90241-0
Publication status	Published - 1994 Mar 11
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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abstract = "SiO2 films were prepared by the sol-gel method using photoirradiation, and the properties microhardness and HF etch rate, etc., were evaluated. The hardness and anti-corrosion in HF of photoirradiated films were superior to films only heated at the same temperature.",

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AB - SiO2 films were prepared by the sol-gel method using photoirradiation, and the properties microhardness and HF etch rate, etc., were evaluated. The hardness and anti-corrosion in HF of photoirradiated films were superior to films only heated at the same temperature.

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