Evaluation of SiO2 thin films prepared by sol-gel method using photoirradiation

S. Maekawa; T. Ohishi

doi:10.1016/0022-3093(94)90241-0

Evaluation of SiO₂ thin films prepared by sol-gel method using photoirradiation

S. Maekawa, T. Ohishi

Research output: Contribution to journal › Letter › peer-review

31 Citations (Scopus)

Abstract

SiO₂ films were prepared by the sol-gel method using photoirradiation, and the properties microhardness and HF etch rate, etc., were evaluated. The hardness and anti-corrosion in HF of photoirradiated films were superior to films only heated at the same temperature.

Original language	English
Pages (from-to)	207-209
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	169
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-3093(94)90241-0
Publication status	Published - 1994 Mar 11
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/0022-3093(94)90241-0

Cite this

@article{6f88f7812c374429a3598d218f411de2,

title = "Evaluation of SiO2 thin films prepared by sol-gel method using photoirradiation",

abstract = "SiO2 films were prepared by the sol-gel method using photoirradiation, and the properties microhardness and HF etch rate, etc., were evaluated. The hardness and anti-corrosion in HF of photoirradiated films were superior to films only heated at the same temperature.",

author = "S. Maekawa and T. Ohishi",

year = "1994",

month = mar,

day = "11",

doi = "10.1016/0022-3093(94)90241-0",

language = "English",

volume = "169",

pages = "207--209",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Evaluation of SiO2 thin films prepared by sol-gel method using photoirradiation

AU - Maekawa, S.

AU - Ohishi, T.

PY - 1994/3/11

Y1 - 1994/3/11

N2 - SiO2 films were prepared by the sol-gel method using photoirradiation, and the properties microhardness and HF etch rate, etc., were evaluated. The hardness and anti-corrosion in HF of photoirradiated films were superior to films only heated at the same temperature.

AB - SiO2 films were prepared by the sol-gel method using photoirradiation, and the properties microhardness and HF etch rate, etc., were evaluated. The hardness and anti-corrosion in HF of photoirradiated films were superior to films only heated at the same temperature.

UR - http://www.scopus.com/inward/record.url?scp=0028760375&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028760375&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(94)90241-0

DO - 10.1016/0022-3093(94)90241-0

M3 - Letter

AN - SCOPUS:0028760375

VL - 169

SP - 207

EP - 209

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 1-2

ER -

Evaluation of SiO₂ thin films prepared by sol-gel method using photoirradiation

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this