Abstract
SiO2 films were prepared by the sol-gel method using photoirradiation, and the properties microhardness and HF etch rate, etc., were evaluated. The hardness and anti-corrosion in HF of photoirradiated films were superior to films only heated at the same temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 207-209 |
| Number of pages | 3 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 169 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 1994 Mar 11 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry
Cite this
Maekawa, S., & Ohishi, T. (1994). Evaluation of SiO2 thin films prepared by sol-gel method using photoirradiation. Journal of Non-Crystalline Solids, 169(1-2), 207-209. https://doi.org/10.1016/0022-3093(94)90241-0