Evolution of leakage paths in Hf O2 Si O2 stacked gate dielectrics

A stable direct observation by ultrahigh vacuum conducting atomic force microscopy

Kentaro Kyuno, K. Kita, A. Toriumi

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

A conducting atomic force microscopy (C-AFM) in ultrahigh vacuum (UHV) is used to directly observe the evolution of leakage path in Hf O2 Si O2 stacked gate dielectrics. Thanks to the UHV environment, reproducible results for both positive and negative tip biases are obtained without material formation on the surface, which has been a problem for atmospheric C-AFM. It is found that the density of leakage spots increases exponentially as a function of tip bias and that it is a large factor for leakage current increase.

Original languageEnglish
Article number063510
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number6
DOIs
Publication statusPublished - 2005 Feb 7
Externally publishedYes

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ultrahigh vacuum
leakage
atomic force microscopy
conduction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Evolution of leakage paths in Hf O2 Si O2 stacked gate dielectrics : A stable direct observation by ultrahigh vacuum conducting atomic force microscopy. / Kyuno, Kentaro; Kita, K.; Toriumi, A.

In: Applied Physics Letters, Vol. 86, No. 6, 063510, 07.02.2005, p. 1-3.

Research output: Contribution to journalArticle

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