Evolution of Leakage Paths in HfO2/SiO2 Stacked Gate Dielectrics: A Stable Direct Observation by Ultrahigh Vacuum Conducting Atomic Force Microscopy

K.Kyuno K.Kyuno, K.Kita K.Kita, A.Toriumi A.Toriumi, Kentaro Kyuno

Research output: Contribution to journalArticle

Original languageEnglish
JournalApplied Physics Letters
Publication statusPublished - 2005 Apr 1

Cite this

Evolution of Leakage Paths in HfO2/SiO2 Stacked Gate Dielectrics: A Stable Direct Observation by Ultrahigh Vacuum Conducting Atomic Force Microscopy. / K.Kyuno, K.Kyuno; K.Kita, K.Kita; A.Toriumi, A.Toriumi; Kyuno, Kentaro.

In: Applied Physics Letters, 01.04.2005.

Research output: Contribution to journalArticle

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