Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

S. Arulkumaran, T. Egawa, G. Zhao, Hiroyasu Ishikawa, M. Umeno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.

Original languageEnglish
Title of host publicationAnnual Device Research Conference Digest
Pages91-92
Number of pages2
Publication statusPublished - 2001
Externally publishedYes
EventDevice Research Conference (DRC) - Notre Dame, IN
Duration: 2001 Jun 252001 Jun 27

Other

OtherDevice Research Conference (DRC)
CityNotre Dame, IN
Period01/6/2501/6/27

Fingerprint

Semiconducting gallium compounds
High electron mobility transistors
Silicon carbide
Epitaxial layers
Metallorganic chemical vapor deposition
Transconductance
Substrates
Atmospheric pressure
Current density
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Arulkumaran, S., Egawa, T., Zhao, G., Ishikawa, H., & Umeno, M. (2001). Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate. In Annual Device Research Conference Digest (pp. 91-92)

Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate. / Arulkumaran, S.; Egawa, T.; Zhao, G.; Ishikawa, Hiroyasu; Umeno, M.

Annual Device Research Conference Digest. 2001. p. 91-92.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Arulkumaran, S, Egawa, T, Zhao, G, Ishikawa, H & Umeno, M 2001, Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate. in Annual Device Research Conference Digest. pp. 91-92, Device Research Conference (DRC), Notre Dame, IN, 01/6/25.
Arulkumaran S, Egawa T, Zhao G, Ishikawa H, Umeno M. Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate. In Annual Device Research Conference Digest. 2001. p. 91-92
Arulkumaran, S. ; Egawa, T. ; Zhao, G. ; Ishikawa, Hiroyasu ; Umeno, M. / Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate. Annual Device Research Conference Digest. 2001. pp. 91-92
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