Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

S. Arulkumaran; T. Egawa; G. Zhao; H. Ishikawa; M. Umeno

Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

S. Arulkumaran, T. Egawa, G. Zhao, H. Ishikawa, M. Umeno

Research output: Contribution to conference › Paper › peer-review

Abstract

The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.

Original language	English
Pages	91-92
Number of pages	2
Publication status	Published - 2001 Jan 1
Externally published	Yes
Event	Device Research Conference (DRC) - Notre Dame, IN, United States Duration: 2001 Jun 25 → 2001 Jun 27

Conference

Conference	Device Research Conference (DRC)
Country/Territory	United States
City	Notre Dame, IN
Period	01/6/25 → 01/6/27

ASJC Scopus subject areas

Engineering(all)

Cite this

@conference{aeaec58b424b47338a1877418382e7b9,

title = "Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate",

abstract = "The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.",

author = "S. Arulkumaran and T. Egawa and G. Zhao and H. Ishikawa and M. Umeno",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "91--92",

note = "Device Research Conference (DRC) ; Conference date: 25-06-2001 Through 27-06-2001",

}

TY - CONF

T1 - Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

AU - Arulkumaran, S.

AU - Egawa, T.

AU - Zhao, G.

AU - Ishikawa, H.

AU - Umeno, M.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.

AB - The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.

UR - http://www.scopus.com/inward/record.url?scp=0034867156&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034867156&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034867156

SP - 91

EP - 92

T2 - Device Research Conference (DRC)

Y2 - 25 June 2001 through 27 June 2001

ER -

Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

Abstract

Conference

ASJC Scopus subject areas

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