Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

S. Arulkumaran, T. Egawa, G. Zhao, H. Ishikawa, M. Umeno

Research output: Contribution to conferencePaper

Abstract

The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.

Original languageEnglish
Pages91-92
Number of pages2
Publication statusPublished - 2001 Jan 1
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: 2001 Jun 252001 Jun 27

Conference

ConferenceDevice Research Conference (DRC)
CountryUnited States
CityNotre Dame, IN
Period01/6/2501/6/27

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Arulkumaran, S., Egawa, T., Zhao, G., Ishikawa, H., & Umeno, M. (2001). Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate. 91-92. Paper presented at Device Research Conference (DRC), Notre Dame, IN, United States.