Exciton fine structures and spin relaxation in semiconductor quantum dots

Research output: Contribution to conferencePaper

Abstract

A comprehensive model is proposed to describe the polarization-dependent fine splitting of exciton doublet lines and their relative intensity ratio and the general aspects of spin relaxation in quantum dots (QD). The spin relaxation of QDs is computed by the energy levels including the spin-orbit interaction, the electron-hole exchange interaction and also the coupling between the conduction band and the valence band, if necessary and to estimate the relaxation rate induced by the electron-phonon interactions.

Original languageEnglish
Pages47-48
Number of pages2
Publication statusPublished - 1999 Jan 1
Externally publishedYes
EventProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA
Duration: 1999 May 231999 May 28

Other

OtherProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99)
CityBaltimore, MD, USA
Period99/5/2399/5/28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Takagahara, T. (1999). Exciton fine structures and spin relaxation in semiconductor quantum dots. 47-48. Paper presented at Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99), Baltimore, MD, USA, .