Excitonic relaxation processes in quantum well structures

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

Excitonic relaxation processes in quantum well structures are reviewed, focusing attention on the localized and the weakly delocalized regimes. In the localized regime, the acoustic phonon-assisted exciton transfer among the localized sites due to the interface roughness plays an important role in determining the energy and phase coherence relaxation at low temperatures. The effect of magnetic field on the exciton localization is also discussed. In the weakly delocalized regime the possible mechanisms of the dephasing relaxation are the acoustic phonon-mediated intra- and inter-subband scattering, the Fano-type resonance between the light hole exciton and the heavy hole exciton continuum and the elastic scattering by the interface roughness. Under the high intensity excitation, the interactions between excitons and free carriers become increasingly important in determining the dephasing relaxation.

Original languageEnglish
Pages (from-to)347-366
Number of pages20
JournalJournal of Luminescence
Volume44
Issue number4-6
DOIs
Publication statusPublished - 1989
Externally publishedYes

Fingerprint

Relaxation processes
Semiconductor quantum wells
excitons
quantum wells
roughness
Surface roughness
Acoustics
Elastic scattering
phase coherence
acoustics
elastic scattering
LDS 751
Scattering
Magnetic fields
continuums
scattering
magnetic fields
excitation
interactions
Temperature

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Atomic and Molecular Physics, and Optics

Cite this

Excitonic relaxation processes in quantum well structures. / Takagahara, Toshihide.

In: Journal of Luminescence, Vol. 44, No. 4-6, 1989, p. 347-366.

Research output: Contribution to journalArticle

@article{664bef95971a4346b197e2b9380e8b6a,
title = "Excitonic relaxation processes in quantum well structures",
abstract = "Excitonic relaxation processes in quantum well structures are reviewed, focusing attention on the localized and the weakly delocalized regimes. In the localized regime, the acoustic phonon-assisted exciton transfer among the localized sites due to the interface roughness plays an important role in determining the energy and phase coherence relaxation at low temperatures. The effect of magnetic field on the exciton localization is also discussed. In the weakly delocalized regime the possible mechanisms of the dephasing relaxation are the acoustic phonon-mediated intra- and inter-subband scattering, the Fano-type resonance between the light hole exciton and the heavy hole exciton continuum and the elastic scattering by the interface roughness. Under the high intensity excitation, the interactions between excitons and free carriers become increasingly important in determining the dephasing relaxation.",
author = "Toshihide Takagahara",
year = "1989",
doi = "10.1016/0022-2313(89)90066-5",
language = "English",
volume = "44",
pages = "347--366",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier",
number = "4-6",

}

TY - JOUR

T1 - Excitonic relaxation processes in quantum well structures

AU - Takagahara, Toshihide

PY - 1989

Y1 - 1989

N2 - Excitonic relaxation processes in quantum well structures are reviewed, focusing attention on the localized and the weakly delocalized regimes. In the localized regime, the acoustic phonon-assisted exciton transfer among the localized sites due to the interface roughness plays an important role in determining the energy and phase coherence relaxation at low temperatures. The effect of magnetic field on the exciton localization is also discussed. In the weakly delocalized regime the possible mechanisms of the dephasing relaxation are the acoustic phonon-mediated intra- and inter-subband scattering, the Fano-type resonance between the light hole exciton and the heavy hole exciton continuum and the elastic scattering by the interface roughness. Under the high intensity excitation, the interactions between excitons and free carriers become increasingly important in determining the dephasing relaxation.

AB - Excitonic relaxation processes in quantum well structures are reviewed, focusing attention on the localized and the weakly delocalized regimes. In the localized regime, the acoustic phonon-assisted exciton transfer among the localized sites due to the interface roughness plays an important role in determining the energy and phase coherence relaxation at low temperatures. The effect of magnetic field on the exciton localization is also discussed. In the weakly delocalized regime the possible mechanisms of the dephasing relaxation are the acoustic phonon-mediated intra- and inter-subband scattering, the Fano-type resonance between the light hole exciton and the heavy hole exciton continuum and the elastic scattering by the interface roughness. Under the high intensity excitation, the interactions between excitons and free carriers become increasingly important in determining the dephasing relaxation.

UR - http://www.scopus.com/inward/record.url?scp=0024935165&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024935165&partnerID=8YFLogxK

U2 - 10.1016/0022-2313(89)90066-5

DO - 10.1016/0022-2313(89)90066-5

M3 - Article

AN - SCOPUS:0024935165

VL - 44

SP - 347

EP - 366

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

IS - 4-6

ER -