Abstract
Excitonic relaxation processes in quantum well structures are reviewed, focusing attention on the localized and the weakly delocalized regimes. In the localized regime, the acoustic phonon-assisted exciton transfer among the localized sites due to the interface roughness plays an important role in determining the energy and phase coherence relaxation at low temperatures. The effect of magnetic field on the exciton localization is also discussed. In the weakly delocalized regime the possible mechanisms of the dephasing relaxation are the acoustic phonon-mediated intra- and inter-subband scattering, the Fano-type resonance between the light hole exciton and the heavy hole exciton continuum and the elastic scattering by the interface roughness. Under the high intensity excitation, the interactions between excitons and free carriers become increasingly important in determining the dephasing relaxation.
| Original language | English |
|---|---|
| Pages (from-to) | 347-366 |
| Number of pages | 20 |
| Journal | Journal of Luminescence |
| Volume | 44 |
| Issue number | 4-6 |
| DOIs | |
| Publication status | Published - 1989 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Atomic and Molecular Physics, and Optics
Cite this
Excitonic relaxation processes in quantum well structures. / Takagahara, Toshihide.
In: Journal of Luminescence, Vol. 44, No. 4-6, 1989, p. 347-366.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Excitonic relaxation processes in quantum well structures
AU - Takagahara, Toshihide
PY - 1989
Y1 - 1989
N2 - Excitonic relaxation processes in quantum well structures are reviewed, focusing attention on the localized and the weakly delocalized regimes. In the localized regime, the acoustic phonon-assisted exciton transfer among the localized sites due to the interface roughness plays an important role in determining the energy and phase coherence relaxation at low temperatures. The effect of magnetic field on the exciton localization is also discussed. In the weakly delocalized regime the possible mechanisms of the dephasing relaxation are the acoustic phonon-mediated intra- and inter-subband scattering, the Fano-type resonance between the light hole exciton and the heavy hole exciton continuum and the elastic scattering by the interface roughness. Under the high intensity excitation, the interactions between excitons and free carriers become increasingly important in determining the dephasing relaxation.
AB - Excitonic relaxation processes in quantum well structures are reviewed, focusing attention on the localized and the weakly delocalized regimes. In the localized regime, the acoustic phonon-assisted exciton transfer among the localized sites due to the interface roughness plays an important role in determining the energy and phase coherence relaxation at low temperatures. The effect of magnetic field on the exciton localization is also discussed. In the weakly delocalized regime the possible mechanisms of the dephasing relaxation are the acoustic phonon-mediated intra- and inter-subband scattering, the Fano-type resonance between the light hole exciton and the heavy hole exciton continuum and the elastic scattering by the interface roughness. Under the high intensity excitation, the interactions between excitons and free carriers become increasingly important in determining the dephasing relaxation.
UR - http://www.scopus.com/inward/record.url?scp=0024935165&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024935165&partnerID=8YFLogxK
U2 - 10.1016/0022-2313(89)90066-5
DO - 10.1016/0022-2313(89)90066-5
M3 - Article
AN - SCOPUS:0024935165
VL - 44
SP - 347
EP - 366
JO - Journal of Luminescence
JF - Journal of Luminescence
SN - 0022-2313
IS - 4-6
ER -