Abstract
We review the recent progress in our understanding of the effect of B-site randomness on Pb(In1/2Nb1/2)O3 (PIN) from the experimental and theoretical viewpoints. PIN is one of the ideal systems for investigating the effect of perovskite B-site randomness on relaxor formation, because it can be in the antiferroelectric (AFE), ferroelectric (FE), or relaxor state depending on B-site randomness. Lattice dynamics measured in ordered and disordered PINs indicates the existence of FE instability regardless of the B-site randomness of PIN. AFE is stabilized when the B-site is spatially ordered, overwhelming FE instability. The hidden FE state starts to appear as B-site randomness becomes stronger and suppresses AFE instability. Ultimately, the randomness competes with the development of FE regions and blocks long-range FE ordering, which yields polar nanoregions (PNRs) resulting in relaxor behavior. In order to investigate the interesting behavior of PIN, we constructed a minimal model that includes dipolar interaction and easy-axis anisotropy which depends on B-site randomness. The results from Monte Carlo simulations show that the model well reproduces the phase diagram and dielectric constant of PIN qualitatively.
| Original language | English |
|---|---|
| Article number | 011012 |
| Journal | Journal of the Physical Society of Japan |
| Volume | 79 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2010 Jan |
| Externally published | Yes |
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Keywords
- Antiferroelectric
- B-site randomness
- Chemical ordering
- Ferroelectric
- Pb(InNb)O
- Phonon
- Relaxor
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Experiment and theory of Pb(In1/2Nb1/2)O3 : Antiferroelectric, ferroelectric, or relaxor state depending on perovskite B-site randomness. / Ohwada, Kenji; Tomita, Yusuke.
In: Journal of the Physical Society of Japan, Vol. 79, No. 1, 011012, 01.2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Experiment and theory of Pb(In1/2Nb1/2)O3
T2 - Antiferroelectric, ferroelectric, or relaxor state depending on perovskite B-site randomness
AU - Ohwada, Kenji
AU - Tomita, Yusuke
PY - 2010/1
Y1 - 2010/1
N2 - We review the recent progress in our understanding of the effect of B-site randomness on Pb(In1/2Nb1/2)O3 (PIN) from the experimental and theoretical viewpoints. PIN is one of the ideal systems for investigating the effect of perovskite B-site randomness on relaxor formation, because it can be in the antiferroelectric (AFE), ferroelectric (FE), or relaxor state depending on B-site randomness. Lattice dynamics measured in ordered and disordered PINs indicates the existence of FE instability regardless of the B-site randomness of PIN. AFE is stabilized when the B-site is spatially ordered, overwhelming FE instability. The hidden FE state starts to appear as B-site randomness becomes stronger and suppresses AFE instability. Ultimately, the randomness competes with the development of FE regions and blocks long-range FE ordering, which yields polar nanoregions (PNRs) resulting in relaxor behavior. In order to investigate the interesting behavior of PIN, we constructed a minimal model that includes dipolar interaction and easy-axis anisotropy which depends on B-site randomness. The results from Monte Carlo simulations show that the model well reproduces the phase diagram and dielectric constant of PIN qualitatively.
AB - We review the recent progress in our understanding of the effect of B-site randomness on Pb(In1/2Nb1/2)O3 (PIN) from the experimental and theoretical viewpoints. PIN is one of the ideal systems for investigating the effect of perovskite B-site randomness on relaxor formation, because it can be in the antiferroelectric (AFE), ferroelectric (FE), or relaxor state depending on B-site randomness. Lattice dynamics measured in ordered and disordered PINs indicates the existence of FE instability regardless of the B-site randomness of PIN. AFE is stabilized when the B-site is spatially ordered, overwhelming FE instability. The hidden FE state starts to appear as B-site randomness becomes stronger and suppresses AFE instability. Ultimately, the randomness competes with the development of FE regions and blocks long-range FE ordering, which yields polar nanoregions (PNRs) resulting in relaxor behavior. In order to investigate the interesting behavior of PIN, we constructed a minimal model that includes dipolar interaction and easy-axis anisotropy which depends on B-site randomness. The results from Monte Carlo simulations show that the model well reproduces the phase diagram and dielectric constant of PIN qualitatively.
KW - Antiferroelectric
KW - B-site randomness
KW - Chemical ordering
KW - Ferroelectric
KW - Pb(InNb)O
KW - Phonon
KW - Relaxor
UR - http://www.scopus.com/inward/record.url?scp=77149156634&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77149156634&partnerID=8YFLogxK
U2 - 10.1143/JPSJ.79.011012
DO - 10.1143/JPSJ.79.011012
M3 - Article
VL - 79
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 1
M1 - 011012
ER -