Abstract
We review the recent progress in our understanding of the effect of B-site randomness on Pb(In1/2Nb1/2)O3 (PIN) from the experimental and theoretical viewpoints. PIN is one of the ideal systems for investigating the effect of perovskite B-site randomness on relaxor formation, because it can be in the antiferroelectric (AFE), ferroelectric (FE), or relaxor state depending on B-site randomness. Lattice dynamics measured in ordered and disordered PINs indicates the existence of FE instability regardless of the B-site randomness of PIN. AFE is stabilized when the B-site is spatially ordered, overwhelming FE instability. The hidden FE state starts to appear as B-site randomness becomes stronger and suppresses AFE instability. Ultimately, the randomness competes with the development of FE regions and blocks long-range FE ordering, which yields polar nanoregions (PNRs) resulting in relaxor behavior. In order to investigate the interesting behavior of PIN, we constructed a minimal model that includes dipolar interaction and easy-axis anisotropy which depends on B-site randomness. The results from Monte Carlo simulations show that the model well reproduces the phase diagram and dielectric constant of PIN qualitatively.
Original language | English |
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Article number | 011012 |
Journal | journal of the physical society of japan |
Volume | 79 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2010 Jan |
Externally published | Yes |
Keywords
- Antiferroelectric
- B-site randomness
- Chemical ordering
- Ferroelectric
- Pb(InNb)O
- Phonon
- Relaxor
ASJC Scopus subject areas
- Physics and Astronomy(all)