Extension of high fT operation bias range for an AlInAs/InGaAs HBT

S. Tanaka, A. Furukawa, T. Baba, M. Madihian, M. Mizuta, K. Honjo

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

The authors report on the fabrication and characteristics of AlInAs/InGaAs HBTs (heterojunction bipolar transistors) with a base-collector structure that results in high-fT operation over a wide range of collector bias voltage variation. This feature results in high-speed switching performance for digital circuits, where the device operating bias point varies widely due to logic swing. The fabricated device exhibited an fT-VCE characteristic with a broad peak at around 2.2 V (VBE = 1.0 V). It was found that the electron transit time tB + tC is insensitive to external voltages. A realistic flat fT-VCE characteristic can be obtained by reducing extrinsic delay time.

Original languageEnglish
Pages175-184
Number of pages10
Publication statusPublished - 1989 Dec 1
EventProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: 1989 Aug 71989 Aug 9

Other

OtherProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period89/8/789/8/9

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Tanaka, S., Furukawa, A., Baba, T., Madihian, M., Mizuta, M., & Honjo, K. (1989). Extension of high fT operation bias range for an AlInAs/InGaAs HBT. 175-184. Paper presented at Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .