Extension of high fT operation bias range for an AlInAs/InGaAs HBT

Shinichi Tanaka, A. Furukawa, T. Baba, M. Madihian, M. Mizuta, K. Honjo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The authors report on the fabrication and characteristics of AlInAs/InGaAs HBTs (heterojunction bipolar transistors) with a base-collector structure that results in high-fT operation over a wide range of collector bias voltage variation. This feature results in high-speed switching performance for digital circuits, where the device operating bias point varies widely due to logic swing. The fabricated device exhibited an fT-VCE characteristic with a broad peak at around 2.2 V (VBE = 1.0 V). It was found that the electron transit time tB + tC is insensitive to external voltages. A realistic flat fT-VCE characteristic can be obtained by reducing extrinsic delay time.

Original languageEnglish
Title of host publicationProc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages175-184
Number of pages10
Publication statusPublished - 1989
Externally publishedYes
EventProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: 1989 Aug 71989 Aug 9

Other

OtherProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period89/8/789/8/9

Fingerprint

Digital circuits
Heterojunction bipolar transistors
Bias voltage
Time delay
Fabrication
Electrons
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Tanaka, S., Furukawa, A., Baba, T., Madihian, M., Mizuta, M., & Honjo, K. (1989). Extension of high fT operation bias range for an AlInAs/InGaAs HBT. In Anon (Ed.), Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit (pp. 175-184). Piscataway, NJ, United States: Publ by IEEE.

Extension of high fT operation bias range for an AlInAs/InGaAs HBT. / Tanaka, Shinichi; Furukawa, A.; Baba, T.; Madihian, M.; Mizuta, M.; Honjo, K.

Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit. ed. / Anon. Piscataway, NJ, United States : Publ by IEEE, 1989. p. 175-184.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanaka, S, Furukawa, A, Baba, T, Madihian, M, Mizuta, M & Honjo, K 1989, Extension of high fT operation bias range for an AlInAs/InGaAs HBT. in Anon (ed.), Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit. Publ by IEEE, Piscataway, NJ, United States, pp. 175-184, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 89/8/7.
Tanaka S, Furukawa A, Baba T, Madihian M, Mizuta M, Honjo K. Extension of high fT operation bias range for an AlInAs/InGaAs HBT. In Anon, editor, Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit. Piscataway, NJ, United States: Publ by IEEE. 1989. p. 175-184
Tanaka, Shinichi ; Furukawa, A. ; Baba, T. ; Madihian, M. ; Mizuta, M. ; Honjo, K. / Extension of high fT operation bias range for an AlInAs/InGaAs HBT. Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit. editor / Anon. Piscataway, NJ, United States : Publ by IEEE, 1989. pp. 175-184
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