TY - JOUR
T1 - Extraordinary thermoelectric performance in MgAgSb alloy with ultralow thermal conductivity
AU - Zheng, Yanyan
AU - Liu, Chengyan
AU - Miao, Lei
AU - Li, Chao
AU - Huang, Rong
AU - Gao, Jie
AU - Wang, Xiaoyang
AU - Chen, Junliang
AU - Zhou, Yanchun
AU - Nishibori, Eiji
N1 - Funding Information:
This work was supported by National Natural Science Foundation of China ; under Grant no. 51572049 , 51562005 , 51772056 ; Natural Science Foundation of Guangxi Province under Grant nos. 2015GXNSFFA139002 , 2016GXNSFBA380152 ; The synchrotron experiments were performed at SPring-8 BL02B2 with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) as a Partner User (Proposal No. 2017B0074). This work was also supported by JSPS KAKENHI Grant Numbers JP17H05328 .
Publisher Copyright:
© 2019 Elsevier Ltd
PY - 2019/5
Y1 - 2019/5
N2 - MgAgSb-based materials are ideal candidates for thermoelectric applications due to several advantages, such as rich elements, low cost and excellent mechanical robustness. Recently, the all-scale hierarchical architecture and strong anharmonicity in bonding are realized as effective strategies to reduce the lattice thermal conductivity greatly. Here, a design of the all-scale hierarchical architectures, in which the phonon is scattered by the high density of grain boundaries, dislocation, stacking faults, twin boundaries and nanopores, and enhancement of Grüneisen parameter have been demonstrated in reducing the lattice thermal conductivity of MgAgSb materials in the whole temperature range, resulting in an ultralow lattice thermal conductivity ∼ 0.45 W m −1 K −1 at 473 K. Furthermore, the carrier concentration and mobility are also optimized by Zn-doping and heat-treating. The simultaneous optimization of electrical and thermal transport properties contributes to a tremendous enhancement of average ZT to about 1.3 in the range from 323 K to 548 K (the maximum ZT is about 1.4 at 423 K) in the sample Mg 0.97 Zn 0.03 Ag 0.9 Sb 0.95 with heat-treating for 10 days. The method we designed not only boosts the thermoelectric application of MgAgSb-based materials but also enables a synergetic strategy for designing thermoelectric materials with high thermoelectric performance.
AB - MgAgSb-based materials are ideal candidates for thermoelectric applications due to several advantages, such as rich elements, low cost and excellent mechanical robustness. Recently, the all-scale hierarchical architecture and strong anharmonicity in bonding are realized as effective strategies to reduce the lattice thermal conductivity greatly. Here, a design of the all-scale hierarchical architectures, in which the phonon is scattered by the high density of grain boundaries, dislocation, stacking faults, twin boundaries and nanopores, and enhancement of Grüneisen parameter have been demonstrated in reducing the lattice thermal conductivity of MgAgSb materials in the whole temperature range, resulting in an ultralow lattice thermal conductivity ∼ 0.45 W m −1 K −1 at 473 K. Furthermore, the carrier concentration and mobility are also optimized by Zn-doping and heat-treating. The simultaneous optimization of electrical and thermal transport properties contributes to a tremendous enhancement of average ZT to about 1.3 in the range from 323 K to 548 K (the maximum ZT is about 1.4 at 423 K) in the sample Mg 0.97 Zn 0.03 Ag 0.9 Sb 0.95 with heat-treating for 10 days. The method we designed not only boosts the thermoelectric application of MgAgSb-based materials but also enables a synergetic strategy for designing thermoelectric materials with high thermoelectric performance.
KW - All-scale hierarchical architectures
KW - Grüneisen parameter
KW - MgAgSb
KW - Thermoelectric properties
KW - Zn-doping and heat-treating
UR - http://www.scopus.com/inward/record.url?scp=85062039727&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85062039727&partnerID=8YFLogxK
U2 - 10.1016/j.nanoen.2019.02.045
DO - 10.1016/j.nanoen.2019.02.045
M3 - Article
AN - SCOPUS:85062039727
SN - 2211-2855
VL - 59
SP - 311
EP - 320
JO - Nano Energy
JF - Nano Energy
ER -