Fabrication and optical characterization of vanadium oxide nano-particulates thin film

Sakae Tanemura; L. Miao; Y. Kajino; Y. Itano; M. Tanemura; S. Toh; K. Kaneko; Y. Mori

doi:10.1007/s10854-007-9182-z

Fabrication and optical characterization of vanadium oxide nano-particulates thin film

Sakae Tanemura, L. Miao, Y. Kajino, Y. Itano, M. Tanemura, S. Toh, K. Kaneko, Y. Mori

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have succeeded to fabricate the thin films (350 nm in total thickness) consisting of semiconducting Vanadium-oxide (VO _0.9+x (0.30 ≤ x < 0.37)) nano-particles with 3.47 nm in averaged diameter by using the combined magnetron sputtering and gas aggregation methods. The optical band gap of the film is evaluated as 3.88 eV under the ad hoc assumption of direct allowed optical transition mode by spectroscopic ellipsometry. This value is expanded by 0.18 eV comparing with the estimated VO bulk value. The widening of band gap might be due to the lattice strain and/or the quantum confinement effect of the composed nano-particles.

Original language	English
Pages (from-to)	43-46
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	18
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1007/s10854-007-9182-z
Publication status	Published - 2007 Oct
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10854-007-9182-z

Cite this

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title = "Fabrication and optical characterization of vanadium oxide nano-particulates thin film",

abstract = "We have succeeded to fabricate the thin films (350 nm in total thickness) consisting of semiconducting Vanadium-oxide (VO 0.9+x (0.30 ≤ x < 0.37)) nano-particles with 3.47 nm in averaged diameter by using the combined magnetron sputtering and gas aggregation methods. The optical band gap of the film is evaluated as 3.88 eV under the ad hoc assumption of direct allowed optical transition mode by spectroscopic ellipsometry. This value is expanded by 0.18 eV comparing with the estimated VO bulk value. The widening of band gap might be due to the lattice strain and/or the quantum confinement effect of the composed nano-particles.",

author = "Sakae Tanemura and L. Miao and Y. Kajino and Y. Itano and M. Tanemura and S. Toh and K. Kaneko and Y. Mori",

note = "Funding Information: Acknowledgement This work is supported in part by grants from the NITECH 21st Century COE program for {\textquoteright}{\textquoteright}World Ceramics Center for Environmental Harmony{\textquoteright}{\textquoteright}. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2007",

month = oct,

doi = "10.1007/s10854-007-9182-z",

language = "English",

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pages = "43--46",

journal = "Journal of Materials Science: Materials in Electronics",

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AU - Tanemura, Sakae

AU - Miao, L.

AU - Kajino, Y.

AU - Itano, Y.

AU - Tanemura, M.

AU - Toh, S.

AU - Kaneko, K.

AU - Mori, Y.

N1 - Funding Information: Acknowledgement This work is supported in part by grants from the NITECH 21st Century COE program for ’’World Ceramics Center for Environmental Harmony’’. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2007/10

Y1 - 2007/10

N2 - We have succeeded to fabricate the thin films (350 nm in total thickness) consisting of semiconducting Vanadium-oxide (VO 0.9+x (0.30 ≤ x < 0.37)) nano-particles with 3.47 nm in averaged diameter by using the combined magnetron sputtering and gas aggregation methods. The optical band gap of the film is evaluated as 3.88 eV under the ad hoc assumption of direct allowed optical transition mode by spectroscopic ellipsometry. This value is expanded by 0.18 eV comparing with the estimated VO bulk value. The widening of band gap might be due to the lattice strain and/or the quantum confinement effect of the composed nano-particles.

AB - We have succeeded to fabricate the thin films (350 nm in total thickness) consisting of semiconducting Vanadium-oxide (VO 0.9+x (0.30 ≤ x < 0.37)) nano-particles with 3.47 nm in averaged diameter by using the combined magnetron sputtering and gas aggregation methods. The optical band gap of the film is evaluated as 3.88 eV under the ad hoc assumption of direct allowed optical transition mode by spectroscopic ellipsometry. This value is expanded by 0.18 eV comparing with the estimated VO bulk value. The widening of band gap might be due to the lattice strain and/or the quantum confinement effect of the composed nano-particles.

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Fabrication and optical characterization of vanadium oxide nano-particulates thin film

Abstract

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