Fabrication and properties of Bi2SiO5 thin films for MFIS structures

Masaki Yamaguchi, K. Hiraki, Tetsuya Homma, T. Nagatomo, Y. Masuda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Bismuth silicate (Bi2SiO5) thin films expected as the intermediate buffer layer for metal-ferroelectric-insulator-semiconductor (MFIS) structures were fabricated on Si(100) wafers by rf magnetron sputtering. It was confirmed that the resultant films were single phases Bi2SiO5 with c-axis dominant orientated. The relative dielectric constant was estimated to be approximately 14. The leakage current density of the metal-insulator-semiconductor (MIS) diode is on the order of 10-10 A cm-2, under the applied electric field of less than 350 kV cm-1. In the capacitance-voltage (C-V) characteristics measurement results, it is worth nothing that hysteresis is hardly observed. The interface trap density at the midgap is estimated to be approximately 6×1012 cm-2 eV-1. The numerical evaluation results indicate that the MFIS capacitor can be reversed at a low applied voltage.

Original languageEnglish
Title of host publicationIEEE International Symposium on Applications of Ferroelectrics
EditorsS K Streiffer, B J Gibbons, T Tsurumi
Pages629-632
Number of pages4
Volume2
Publication statusPublished - 2000
Event12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI
Duration: 2000 Jul 212000 Aug 2

Other

Other12th IEEE International Symposium on Applications of Ferroelectrics
CityHonolulu, HI
Period00/7/2100/8/2

Fingerprint

Ferroelectric materials
Metals
Semiconductor materials
Fabrication
Thin films
Semiconductor diodes
Silicates
Bismuth
Electric potential
Buffer layers
Leakage currents
Magnetron sputtering
Hysteresis
Capacitors
Permittivity
Current density
Capacitance
Electric fields

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Yamaguchi, M., Hiraki, K., Homma, T., Nagatomo, T., & Masuda, Y. (2000). Fabrication and properties of Bi2SiO5 thin films for MFIS structures. In S. K. Streiffer, B. J. Gibbons, & T. Tsurumi (Eds.), IEEE International Symposium on Applications of Ferroelectrics (Vol. 2, pp. 629-632)

Fabrication and properties of Bi2SiO5 thin films for MFIS structures. / Yamaguchi, Masaki; Hiraki, K.; Homma, Tetsuya; Nagatomo, T.; Masuda, Y.

IEEE International Symposium on Applications of Ferroelectrics. ed. / S K Streiffer; B J Gibbons; T Tsurumi. Vol. 2 2000. p. 629-632.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamaguchi, M, Hiraki, K, Homma, T, Nagatomo, T & Masuda, Y 2000, Fabrication and properties of Bi2SiO5 thin films for MFIS structures. in SK Streiffer, BJ Gibbons & T Tsurumi (eds), IEEE International Symposium on Applications of Ferroelectrics. vol. 2, pp. 629-632, 12th IEEE International Symposium on Applications of Ferroelectrics, Honolulu, HI, 00/7/21.
Yamaguchi M, Hiraki K, Homma T, Nagatomo T, Masuda Y. Fabrication and properties of Bi2SiO5 thin films for MFIS structures. In Streiffer SK, Gibbons BJ, Tsurumi T, editors, IEEE International Symposium on Applications of Ferroelectrics. Vol. 2. 2000. p. 629-632
Yamaguchi, Masaki ; Hiraki, K. ; Homma, Tetsuya ; Nagatomo, T. ; Masuda, Y. / Fabrication and properties of Bi2SiO5 thin films for MFIS structures. IEEE International Symposium on Applications of Ferroelectrics. editor / S K Streiffer ; B J Gibbons ; T Tsurumi. Vol. 2 2000. pp. 629-632
@inproceedings{ed4a36a7d1cf4a3b8f20b3cf727fb990,
title = "Fabrication and properties of Bi2SiO5 thin films for MFIS structures",
abstract = "Bismuth silicate (Bi2SiO5) thin films expected as the intermediate buffer layer for metal-ferroelectric-insulator-semiconductor (MFIS) structures were fabricated on Si(100) wafers by rf magnetron sputtering. It was confirmed that the resultant films were single phases Bi2SiO5 with c-axis dominant orientated. The relative dielectric constant was estimated to be approximately 14. The leakage current density of the metal-insulator-semiconductor (MIS) diode is on the order of 10-10 A cm-2, under the applied electric field of less than 350 kV cm-1. In the capacitance-voltage (C-V) characteristics measurement results, it is worth nothing that hysteresis is hardly observed. The interface trap density at the midgap is estimated to be approximately 6×1012 cm-2 eV-1. The numerical evaluation results indicate that the MFIS capacitor can be reversed at a low applied voltage.",
author = "Masaki Yamaguchi and K. Hiraki and Tetsuya Homma and T. Nagatomo and Y. Masuda",
year = "2000",
language = "English",
volume = "2",
pages = "629--632",
editor = "Streiffer, {S K} and Gibbons, {B J} and T Tsurumi",
booktitle = "IEEE International Symposium on Applications of Ferroelectrics",

}

TY - GEN

T1 - Fabrication and properties of Bi2SiO5 thin films for MFIS structures

AU - Yamaguchi, Masaki

AU - Hiraki, K.

AU - Homma, Tetsuya

AU - Nagatomo, T.

AU - Masuda, Y.

PY - 2000

Y1 - 2000

N2 - Bismuth silicate (Bi2SiO5) thin films expected as the intermediate buffer layer for metal-ferroelectric-insulator-semiconductor (MFIS) structures were fabricated on Si(100) wafers by rf magnetron sputtering. It was confirmed that the resultant films were single phases Bi2SiO5 with c-axis dominant orientated. The relative dielectric constant was estimated to be approximately 14. The leakage current density of the metal-insulator-semiconductor (MIS) diode is on the order of 10-10 A cm-2, under the applied electric field of less than 350 kV cm-1. In the capacitance-voltage (C-V) characteristics measurement results, it is worth nothing that hysteresis is hardly observed. The interface trap density at the midgap is estimated to be approximately 6×1012 cm-2 eV-1. The numerical evaluation results indicate that the MFIS capacitor can be reversed at a low applied voltage.

AB - Bismuth silicate (Bi2SiO5) thin films expected as the intermediate buffer layer for metal-ferroelectric-insulator-semiconductor (MFIS) structures were fabricated on Si(100) wafers by rf magnetron sputtering. It was confirmed that the resultant films were single phases Bi2SiO5 with c-axis dominant orientated. The relative dielectric constant was estimated to be approximately 14. The leakage current density of the metal-insulator-semiconductor (MIS) diode is on the order of 10-10 A cm-2, under the applied electric field of less than 350 kV cm-1. In the capacitance-voltage (C-V) characteristics measurement results, it is worth nothing that hysteresis is hardly observed. The interface trap density at the midgap is estimated to be approximately 6×1012 cm-2 eV-1. The numerical evaluation results indicate that the MFIS capacitor can be reversed at a low applied voltage.

UR - http://www.scopus.com/inward/record.url?scp=0034470396&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034470396&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0034470396

VL - 2

SP - 629

EP - 632

BT - IEEE International Symposium on Applications of Ferroelectrics

A2 - Streiffer, S K

A2 - Gibbons, B J

A2 - Tsurumi, T

ER -