Fabrication and properties of Bi2SiO5 thin films for MFIS structures

M. Yamaguchi, K. Hiraki, T. Homma, T. Nagatomo, Y. Masuda

Research output: Contribution to conferencePaper

Abstract

Bismuth silicate (Bi2SiO5) thin films expected as the intermediate buffer layer for metal-ferroelectric-insulator-semiconductor (MFIS) structures were fabricated on Si(100) wafers by rf magnetron sputtering. It was confirmed that the resultant films were single phases Bi2SiO5 with c-axis dominant orientated. The relative dielectric constant was estimated to be approximately 14. The leakage current density of the metal-insulator-semiconductor (MIS) diode is on the order of 10-10 A cm-2, under the applied electric field of less than 350 kV cm-1. In the capacitance-voltage (C-V) characteristics measurement results, it is worth nothing that hysteresis is hardly observed. The interface trap density at the midgap is estimated to be approximately 6×1012 cm-2 eV-1. The numerical evaluation results indicate that the MFIS capacitor can be reversed at a low applied voltage.

Original languageEnglish
Pages629-632
Number of pages4
Publication statusPublished - 2000 Dec 1
Event12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States
Duration: 2000 Jul 212000 Aug 2

Conference

Conference12th IEEE International Symposium on Applications of Ferroelectrics
CountryUnited States
CityHonolulu, HI
Period00/7/2100/8/2

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Yamaguchi, M., Hiraki, K., Homma, T., Nagatomo, T., & Masuda, Y. (2000). Fabrication and properties of Bi2SiO5 thin films for MFIS structures. 629-632. Paper presented at 12th IEEE International Symposium on Applications of Ferroelectrics, Honolulu, HI, United States.