Fabrication of BIT films by alcohol-related ink and its properties

Masaki Yamaguchi, Tomohiro Oba, Yoichiro Masuda

Research output: Contribution to journalConference article

Abstract

Bismuth titanate (Bi4Ti3O12: BIT) thin film was prepared on Pt coated Si substrate by using by an alcoholic related material. The films show single perovskite phase and predominantly c-axis orientation, not independently on crystallized pressures. The diffraction peak intensity was remarkably increased, and the full width at half maximum (FWHM) value of the diffraction lines were decreased by increasing crystallized pressures. Moreover, insulation and ferroelectric properties were improved. The remanent polarization and the coercive field values were approximately 1.9 μ C/cm2 and 23kV/cm, respectively.

Original languageEnglish
Pages (from-to)106-112
Number of pages7
JournalFerroelectrics
Volume380
Issue number1 PART 1
DOIs
Publication statusPublished - 2009 Dec 1
Event6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan, Province of China
Duration: 2008 Aug 22008 Aug 6

Keywords

  • Alcoholic solution
  • Bismuth titanate
  • Ferroelectricity
  • Oxidation atmosphere
  • Thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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