Fabrication of crystalline Ge thin films by co-deposition of Au and Ge at low substrate temperatures (>200 °c) without post annealing

Takatoshi Sugiyama, Naoya Mishiba, Masao Kamiko, Kentaro Kyuno

Research output: Contribution to journalArticle

Abstract

Crystalline Ge thin films with (111) orientation are obtained by co-depositing Au and Ge on a substrate heated to >170 °C, with Au segregating at the film surface, which is desirable for selective etching. Although in the conventional metal-induced crystallization method using Au as a catalyst, a bilayer of Au and amorphous Ge layers have to be annealed for Ge to crystallize, the film in this study is already crystalline in the as-deposited state. The effective crystallization process implies the existence of a supercooled liquid alloy layer at the growth front.

Original languageEnglish
Article number095501
JournalApplied Physics Express
Volume9
Issue number9
DOIs
Publication statusPublished - 2016 Sep 1

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Crystallization
Annealing
crystallization
Crystalline materials
Fabrication
Thin films
fabrication
annealing
liquid alloys
Substrates
thin films
Crystal orientation
Etching
etching
catalysts
Temperature
Catalysts
temperature
Liquids
Metals

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Fabrication of crystalline Ge thin films by co-deposition of Au and Ge at low substrate temperatures (>200 °c) without post annealing. / Sugiyama, Takatoshi; Mishiba, Naoya; Kamiko, Masao; Kyuno, Kentaro.

In: Applied Physics Express, Vol. 9, No. 9, 095501, 01.09.2016.

Research output: Contribution to journalArticle

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