Fabrication of Electroless CoWP/NiB Barrier Layer on SiO2 for ULSI Devices

T. Osaka, H. Aramak, M. Yoshino, K. Ueno, I. Matsuda, Y. Shacham-Diam

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)H707-H710
JournalJournal of the Electrochemical Society
Volume156
Publication statusPublished - 2009 Sep 1

Cite this

Osaka, T., Aramak, H., Yoshino, M., Ueno, K., Matsuda, I., & Shacham-Diam, Y. (2009). Fabrication of Electroless CoWP/NiB Barrier Layer on SiO2 for ULSI Devices. Journal of the Electrochemical Society, 156, H707-H710.

Fabrication of Electroless CoWP/NiB Barrier Layer on SiO2 for ULSI Devices. / Osaka, T.; Aramak, H.; Yoshino, M.; Ueno, K.; Matsuda, I.; Shacham-Diam, Y.

In: Journal of the Electrochemical Society, Vol. 156, 01.09.2009, p. H707-H710.

Research output: Contribution to journalArticle

Osaka, T, Aramak, H, Yoshino, M, Ueno, K, Matsuda, I & Shacham-Diam, Y 2009, 'Fabrication of Electroless CoWP/NiB Barrier Layer on SiO2 for ULSI Devices', Journal of the Electrochemical Society, vol. 156, pp. H707-H710.
Osaka T, Aramak H, Yoshino M, Ueno K, Matsuda I, Shacham-Diam Y. Fabrication of Electroless CoWP/NiB Barrier Layer on SiO2 for ULSI Devices. Journal of the Electrochemical Society. 2009 Sep 1;156:H707-H710.
Osaka, T. ; Aramak, H. ; Yoshino, M. ; Ueno, K. ; Matsuda, I. ; Shacham-Diam, Y. / Fabrication of Electroless CoWP/NiB Barrier Layer on SiO2 for ULSI Devices. In: Journal of the Electrochemical Society. 2009 ; Vol. 156. pp. H707-H710.
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AU - Osaka, T.

AU - Aramak, H.

AU - Yoshino, M.

AU - Ueno, K.

AU - Matsuda, I.

AU - Shacham-Diam, Y.

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