Fabrication of electroless CoWP/NiB diffusion barrier layer on SiO 2 for ULSI Devices

Tetsuya Osaka, Hitoshi Aramaki, Masahiro Yoshino, Kazuyoshi Ueno, Itsuaki Matsuda, Yosi Shacham-Diamand

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We investigated the electroless CoWP/NiB diffusion barrier layer for ultralarge-scale integration (ULSI) interconnection by forming the immobilizing Pd catalyst on an organosilane layer. When the electroless CoWP film was formed directly on a Pd-activated organosilane layer, it became islandlike and did not form a continuous layer. When it was formed on an electroless NiB deposited on a Pd-activated organosilane layer, the electroless CoWP film was uniform and formed a continuous layer 10 nm thick. The transmission electron microscopy images of the interfaces of Cu/CoWP/NiB/ SiO2 showed that, at an annealing temperature up to 400°C for 30 min, the interfaces remained unchanged and clear, showing no trace of Cu diffusion into the SiO2 substrate. In-plane X-ray diffraction patterns indicated that the CoWP/NiB film had an amorphous structure and was stable against heat-treatment up to 500°C for 30 min. An evaluation of sheet resistance measurements suggested that the CoWP/NiB film shows appropriate barrier properties for Cu diffusion up to 400°C. The CoWP/NiB film was used as a seed for electroless Cu plating. Trenches 100 nm wide were coated with a 10 nm CoWP/NiB barrier followed by successful trench filling by electroless Cu plating.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number9
DOIs
Publication statusPublished - 2009

Fingerprint

Diffusion barriers
barrier layers
Fabrication
fabrication
plating
Plating
Sheet resistance
Diffraction patterns
Seed
seeds
heat treatment
diffraction patterns
Heat treatment
Annealing
Transmission electron microscopy
catalysts
X ray diffraction
transmission electron microscopy
Catalysts
annealing

ASJC Scopus subject areas

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

Fabrication of electroless CoWP/NiB diffusion barrier layer on SiO 2 for ULSI Devices. / Osaka, Tetsuya; Aramaki, Hitoshi; Yoshino, Masahiro; Ueno, Kazuyoshi; Matsuda, Itsuaki; Shacham-Diamand, Yosi.

In: Journal of the Electrochemical Society, Vol. 156, No. 9, 2009.

Research output: Contribution to journalArticle

Osaka, Tetsuya ; Aramaki, Hitoshi ; Yoshino, Masahiro ; Ueno, Kazuyoshi ; Matsuda, Itsuaki ; Shacham-Diamand, Yosi. / Fabrication of electroless CoWP/NiB diffusion barrier layer on SiO 2 for ULSI Devices. In: Journal of the Electrochemical Society. 2009 ; Vol. 156, No. 9.
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