Fabrication of electroless NiRe barrier layer on SiO2 without sputtered seed layer

T.Osaka T.Osaka, N.Takano N.Takano, T.Kurokawa T.Kurokawa, K.Ueno K.Ueno, Kazuyoshi Ueno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)7-10
JournalElectrochemical and Solid State Letters
Volume5(1)
Publication statusPublished - 2002 Jan 1

Cite this

T.Osaka, T. O., N.Takano, N. T., T.Kurokawa, T. K., K.Ueno, K. U., & Ueno, K. (2002). Fabrication of electroless NiRe barrier layer on SiO2 without sputtered seed layer. Electrochemical and Solid State Letters, 5(1), 7-10.

Fabrication of electroless NiRe barrier layer on SiO2 without sputtered seed layer. / T.Osaka, T.Osaka; N.Takano, N.Takano; T.Kurokawa, T.Kurokawa; K.Ueno, K.Ueno; Ueno, Kazuyoshi.

In: Electrochemical and Solid State Letters, Vol. 5(1), 01.01.2002, p. 7-10.

Research output: Contribution to journalArticle

T.Osaka, T.Osaka ; N.Takano, N.Takano ; T.Kurokawa, T.Kurokawa ; K.Ueno, K.Ueno ; Ueno, Kazuyoshi. / Fabrication of electroless NiRe barrier layer on SiO2 without sputtered seed layer. In: Electrochemical and Solid State Letters. 2002 ; Vol. 5(1). pp. 7-10.
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