Fabrication of electroless NiReP barrier layer on SiO2 without sputtered seed layer

Tetsuya Osaka, Nao Takano, Tetsuya Kurokawa, Kazuyoshi Ueno

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

A new fabrication process for an electrolessly deposited NiReP barrier layer on SiO2 is proposed for ultralarge scale integration applications. The NiReP film was formed electrolessly without sputtered seeds by utilizing a self-assembled monolayer (SAM) as an adhesion and catalyst layer. For the electroless deposition on the SiO2 layer covered with SAM, an acid or a neutral electroless deposition bath was suitable whereas an alkaline solution damaged the SiO2 surface. To fabricate a consistently uniform barrier film on the SAM/SiO2 surface, a two-step process, consisting of a nucleation step performed in an acid electroless deposition bath and a barrier layer formation step carried out in an alkaline bath, is proposed. The two-step process yielded satisfactory results, and the electroless NiReP barrier layer was successfully formed on the SAM/SiO2 surface in a high pH bath.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume5
Issue number1
DOIs
Publication statusPublished - 2002 Jan
Externally publishedYes

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Self assembled monolayers
barrier layers
electroless deposition
Seed
seeds
Electroless plating
baths
Fabrication
fabrication
acids
Acids
adhesion
Nucleation
Adhesion
nucleation
catalysts
Catalysts

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Fabrication of electroless NiReP barrier layer on SiO2 without sputtered seed layer. / Osaka, Tetsuya; Takano, Nao; Kurokawa, Tetsuya; Ueno, Kazuyoshi.

In: Electrochemical and Solid-State Letters, Vol. 5, No. 1, 01.2002.

Research output: Contribution to journalArticle

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