Fabrication of flat end mirror etched by focused ion beam for GaN-based blue-green laser diode

Tsuyoshi Ito, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

14 Citations (Scopus)


Heteroepitaxial GaN film was deposited on sapphire by metalorganic chemical vapor deposition. An end mirror for the GaN-based blue-green laser diode was prepared using focused ion beam (FIB) etching. The tilt angle normal to the GaN layer was shown to be less than 1° by scanning ion microscopy. The root mean square surface roughness was 11 Å as observed by atomic force microscopy. The data indicates that FIB is a powerful technique for the fabrication of GaN-based blue-green laser diodes.

Original languageEnglish
Pages (from-to)7710-7711
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number12 SUPPL. B
Publication statusPublished - 1997 Dec 1



  • Atomic force microscopy
  • End mirror
  • Focused ion beam etching
  • GaN-based blue-green laser diode
  • Metalorganic chemical vapor deposition
  • Reactive ion etching
  • Root mean square surface roughness

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this