Fabrication of flat end mirror etched by focused ion beam for GaN-based blue-green laser diode

Tsuyoshi Ito, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Heteroepitaxial GaN film was deposited on sapphire by metalorganic chemical vapor deposition. An end mirror for the GaN-based blue-green laser diode was prepared using focused ion beam (FIB) etching. The tilt angle normal to the GaN layer was shown to be less than 1° by scanning ion microscopy. The root mean square surface roughness was 11 Å as observed by atomic force microscopy. The data indicates that FIB is a powerful technique for the fabrication of GaN-based blue-green laser diodes.

Original languageEnglish
Pages (from-to)7710-7711
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number12 SUPPL. B
Publication statusPublished - 1997 Dec
Externally publishedYes

Fingerprint

Focused ion beams
Semiconductor lasers
Mirrors
semiconductor lasers
ion beams
mirrors
Fabrication
fabrication
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
Etching
Atomic force microscopy
Microscopic examination
surface roughness
sapphire
Surface roughness
etching
atomic force microscopy
microscopy

Keywords

  • Atomic force microscopy
  • End mirror
  • Focused ion beam etching
  • GaN-based blue-green laser diode
  • Metalorganic chemical vapor deposition
  • Reactive ion etching
  • Root mean square surface roughness

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Fabrication of flat end mirror etched by focused ion beam for GaN-based blue-green laser diode. / Ito, Tsuyoshi; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 12 SUPPL. B, 12.1997, p. 7710-7711.

Research output: Contribution to journalArticle

@article{f567c99745b44dc383fdd308736b48a5,
title = "Fabrication of flat end mirror etched by focused ion beam for GaN-based blue-green laser diode",
abstract = "Heteroepitaxial GaN film was deposited on sapphire by metalorganic chemical vapor deposition. An end mirror for the GaN-based blue-green laser diode was prepared using focused ion beam (FIB) etching. The tilt angle normal to the GaN layer was shown to be less than 1° by scanning ion microscopy. The root mean square surface roughness was 11 {\AA} as observed by atomic force microscopy. The data indicates that FIB is a powerful technique for the fabrication of GaN-based blue-green laser diodes.",
keywords = "Atomic force microscopy, End mirror, Focused ion beam etching, GaN-based blue-green laser diode, Metalorganic chemical vapor deposition, Reactive ion etching, Root mean square surface roughness",
author = "Tsuyoshi Ito and Hiroyasu Ishikawa and Takashi Egawa and Takashi Jimbo and Masayoshi Umeno",
year = "1997",
month = "12",
language = "English",
volume = "36",
pages = "7710--7711",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "12 SUPPL. B",

}

TY - JOUR

T1 - Fabrication of flat end mirror etched by focused ion beam for GaN-based blue-green laser diode

AU - Ito, Tsuyoshi

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 1997/12

Y1 - 1997/12

N2 - Heteroepitaxial GaN film was deposited on sapphire by metalorganic chemical vapor deposition. An end mirror for the GaN-based blue-green laser diode was prepared using focused ion beam (FIB) etching. The tilt angle normal to the GaN layer was shown to be less than 1° by scanning ion microscopy. The root mean square surface roughness was 11 Å as observed by atomic force microscopy. The data indicates that FIB is a powerful technique for the fabrication of GaN-based blue-green laser diodes.

AB - Heteroepitaxial GaN film was deposited on sapphire by metalorganic chemical vapor deposition. An end mirror for the GaN-based blue-green laser diode was prepared using focused ion beam (FIB) etching. The tilt angle normal to the GaN layer was shown to be less than 1° by scanning ion microscopy. The root mean square surface roughness was 11 Å as observed by atomic force microscopy. The data indicates that FIB is a powerful technique for the fabrication of GaN-based blue-green laser diodes.

KW - Atomic force microscopy

KW - End mirror

KW - Focused ion beam etching

KW - GaN-based blue-green laser diode

KW - Metalorganic chemical vapor deposition

KW - Reactive ion etching

KW - Root mean square surface roughness

UR - http://www.scopus.com/inward/record.url?scp=0031346546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031346546&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031346546

VL - 36

SP - 7710

EP - 7711

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12 SUPPL. B

ER -