Fabrication of GaInN multiple-quantum well LEDs on Si (111) by MOCVD

M. Adachi, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)PME-46
JournalDefault journal
Publication statusPublished - 2000 Sep 1

Cite this

Adachi, M., Ishikawa, H., Egawa, T., Jimbo, T., & Umeno, M. (2000). Fabrication of GaInN multiple-quantum well LEDs on Si (111) by MOCVD. Default journal, PME-46.

Fabrication of GaInN multiple-quantum well LEDs on Si (111) by MOCVD. / Adachi, M.; Ishikawa, H.; Egawa, T.; Jimbo, T.; Umeno, M.

In: Default journal, 01.09.2000, p. PME-46.

Research output: Contribution to journalArticle

Adachi, M, Ishikawa, H, Egawa, T, Jimbo, T & Umeno, M 2000, 'Fabrication of GaInN multiple-quantum well LEDs on Si (111) by MOCVD', Default journal, pp. PME-46.
Adachi, M. ; Ishikawa, H. ; Egawa, T. ; Jimbo, T. ; Umeno, M. / Fabrication of GaInN multiple-quantum well LEDs on Si (111) by MOCVD. In: Default journal. 2000 ; pp. PME-46.
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