Fabrication of GaInN multiple-quantum well LEDs on Si (111) by MOCVD

M. Adachi, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)PME-46
JournalDefault journal
Publication statusPublished - 2000 Sep 1

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Adachi, M., Ishikawa, H., Egawa, T., Jimbo, T., & Umeno, M. (2000). Fabrication of GaInN multiple-quantum well LEDs on Si (111) by MOCVD. Default journal, PME-46.