TY - GEN
T1 - Fabrication of high-aspect-ratio PZT structure by nanocomposite sol-gel method for laterally-driven piezoelectric MEMS switch
AU - Wang, Nan
AU - Yoshida, Shinya
AU - Kumano, Masafumi
AU - Kawai, Yusuke
AU - Esashi, Masayoshi
PY - 2012
Y1 - 2012
N2 - In this study, we have proposed a novel laterally driven piezoelectric MEMS (MicroElectro Mechanical Systems) switch using a high-aspect-ratio (AR) PZT (Pb[Zr xTi 1-x]O 3) structure. Then, the fabrication process of the PZT structure based on PZT filling process in a deep Si trench is developed to realize a laterally driven PZT microactuator. At first, the process of the Si trench with a thin Al 2O 3 layer as a Pb-diffusion barrier layer and with a Pt film as the electrode for the actuator is successfully developed. Then, it is demonstrated that the dense and crack-free PZT structure with high-AR can be fabricated by the PZT filling process in the Si trench by nanocomposite sol-gel method. In addition, it is speculated from the X-ray diffraction pattern that the composite PZT has pure perovskite phase and piezoelectric property. The remnant polarization (P r) and the coercive field (E c) of a nanocomposite PZT thick film measured 11.7 μC/cm 2 and 71.2 kV/cm, respectively. As the result of these experiments, it is demonstrated that the fabrication process of the high-AR PZT structure has the potential to realize the laterally driven piezoelectric MEMS switch.
AB - In this study, we have proposed a novel laterally driven piezoelectric MEMS (MicroElectro Mechanical Systems) switch using a high-aspect-ratio (AR) PZT (Pb[Zr xTi 1-x]O 3) structure. Then, the fabrication process of the PZT structure based on PZT filling process in a deep Si trench is developed to realize a laterally driven PZT microactuator. At first, the process of the Si trench with a thin Al 2O 3 layer as a Pb-diffusion barrier layer and with a Pt film as the electrode for the actuator is successfully developed. Then, it is demonstrated that the dense and crack-free PZT structure with high-AR can be fabricated by the PZT filling process in the Si trench by nanocomposite sol-gel method. In addition, it is speculated from the X-ray diffraction pattern that the composite PZT has pure perovskite phase and piezoelectric property. The remnant polarization (P r) and the coercive field (E c) of a nanocomposite PZT thick film measured 11.7 μC/cm 2 and 71.2 kV/cm, respectively. As the result of these experiments, it is demonstrated that the fabrication process of the high-AR PZT structure has the potential to realize the laterally driven piezoelectric MEMS switch.
KW - High-aspect-ratio structure
KW - Nanocomposite PZT
KW - Piezoelectric MEMS switch
UR - http://www.scopus.com/inward/record.url?scp=84861560332&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861560332&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2012.6196767
DO - 10.1109/NEMS.2012.6196767
M3 - Conference contribution
AN - SCOPUS:84861560332
SN - 9781467311243
T3 - 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
SP - 247
EP - 252
BT - 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
T2 - 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
Y2 - 5 March 2012 through 8 March 2012
ER -