Fabrication of high-aspect-ratio PZT structure by sol-gel process using SI mold for MEMS transducers

Nan Wang; Shinya Yoshida; Masafumi Kumano; Masayoshi Esashi

Fabrication of high-aspect-ratio PZT structure by sol-gel process using SI mold for MEMS transducers

Nan Wang, Shinya Yoshida, Masafumi Kumano, Masayoshi Esashi

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports on the fabrication process of high-aspect-ratio PZT (Pb[Zr_xTi_1-x]O₃) structures using nanocomposite sol-gel method for the application to MEMS (Micro Electro-Mechanical Systems) transducers. Deep Si trench coated with a thin Al₂O₃ film as a Pb-diffusion barrier layer by using atomic layer deposition is utilized as a mold. PZT is filled in the Si trench by using nanocomposite sol-gel method. As a result, dense PZT nanocomposite is successfully filled into the Si trench, and the PZT microstructure is also formed by etching the Si mold. The X-ray diffraction pattern indicates that the PZT structure has pure perovskite phase. The remnant polarization (P_r) and the coercive field (E_c) of a nanocomposite PZT thick film measure 11.7 μC/cm² and 71.2 kV/cm, respectively.

Original language	English
Pages (from-to)	214-218
Number of pages	5
Journal	Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument
Volume	34
Issue number	6 SUPPL.
Publication status	Published - 2013 Jun
Externally published	Yes

Keywords

ALD thin film
MEMS transducer
Nanocomposite PZT

ASJC Scopus subject areas

Instrumentation

Cite this

@article{a1ed09854f5a47978da50ee0093357af,

title = "Fabrication of high-aspect-ratio PZT structure by sol-gel process using SI mold for MEMS transducers",

abstract = "This paper reports on the fabrication process of high-aspect-ratio PZT (Pb[ZrxTi1-x]O3) structures using nanocomposite sol-gel method for the application to MEMS (Micro Electro-Mechanical Systems) transducers. Deep Si trench coated with a thin Al2O3 film as a Pb-diffusion barrier layer by using atomic layer deposition is utilized as a mold. PZT is filled in the Si trench by using nanocomposite sol-gel method. As a result, dense PZT nanocomposite is successfully filled into the Si trench, and the PZT microstructure is also formed by etching the Si mold. The X-ray diffraction pattern indicates that the PZT structure has pure perovskite phase. The remnant polarization (Pr) and the coercive field (Ec) of a nanocomposite PZT thick film measure 11.7 μC/cm2 and 71.2 kV/cm, respectively.",

keywords = "ALD thin film, MEMS transducer, Nanocomposite PZT",

author = "Nan Wang and Shinya Yoshida and Masafumi Kumano and Masayoshi Esashi",

year = "2013",

month = jun,

language = "English",

volume = "34",

pages = "214--218",

journal = "Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument",

issn = "0254-3087",

publisher = "Science Press",

number = "6 SUPPL.",

}

TY - JOUR

T1 - Fabrication of high-aspect-ratio PZT structure by sol-gel process using SI mold for MEMS transducers

AU - Wang, Nan

AU - Yoshida, Shinya

AU - Kumano, Masafumi

AU - Esashi, Masayoshi

PY - 2013/6

Y1 - 2013/6

N2 - This paper reports on the fabrication process of high-aspect-ratio PZT (Pb[ZrxTi1-x]O3) structures using nanocomposite sol-gel method for the application to MEMS (Micro Electro-Mechanical Systems) transducers. Deep Si trench coated with a thin Al2O3 film as a Pb-diffusion barrier layer by using atomic layer deposition is utilized as a mold. PZT is filled in the Si trench by using nanocomposite sol-gel method. As a result, dense PZT nanocomposite is successfully filled into the Si trench, and the PZT microstructure is also formed by etching the Si mold. The X-ray diffraction pattern indicates that the PZT structure has pure perovskite phase. The remnant polarization (Pr) and the coercive field (Ec) of a nanocomposite PZT thick film measure 11.7 μC/cm2 and 71.2 kV/cm, respectively.

AB - This paper reports on the fabrication process of high-aspect-ratio PZT (Pb[ZrxTi1-x]O3) structures using nanocomposite sol-gel method for the application to MEMS (Micro Electro-Mechanical Systems) transducers. Deep Si trench coated with a thin Al2O3 film as a Pb-diffusion barrier layer by using atomic layer deposition is utilized as a mold. PZT is filled in the Si trench by using nanocomposite sol-gel method. As a result, dense PZT nanocomposite is successfully filled into the Si trench, and the PZT microstructure is also formed by etching the Si mold. The X-ray diffraction pattern indicates that the PZT structure has pure perovskite phase. The remnant polarization (Pr) and the coercive field (Ec) of a nanocomposite PZT thick film measure 11.7 μC/cm2 and 71.2 kV/cm, respectively.

KW - ALD thin film

KW - MEMS transducer

KW - Nanocomposite PZT

UR - http://www.scopus.com/inward/record.url?scp=84880980976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880980976&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84880980976

VL - 34

SP - 214

EP - 218

JO - Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument

JF - Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument

SN - 0254-3087

IS - 6 SUPPL.

ER -

Fabrication of high-aspect-ratio PZT structure by sol-gel process using SI mold for MEMS transducers

Abstract

Keywords

ASJC Scopus subject areas

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