Abstract
This paper reports on the fabrication process of high-aspect-ratio PZT (Pb[ZrxTi1-x]O3) structures using nanocomposite sol-gel method for the application to MEMS (Micro Electro-Mechanical Systems) transducers. Deep Si trench coated with a thin Al2O3 film as a Pb-diffusion barrier layer by using atomic layer deposition is utilized as a mold. PZT is filled in the Si trench by using nanocomposite sol-gel method. As a result, dense PZT nanocomposite is successfully filled into the Si trench, and the PZT microstructure is also formed by etching the Si mold. The X-ray diffraction pattern indicates that the PZT structure has pure perovskite phase. The remnant polarization (Pr) and the coercive field (Ec) of a nanocomposite PZT thick film measure 11.7 μC/cm2 and 71.2 kV/cm, respectively.
Original language | English |
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Pages (from-to) | 214-218 |
Number of pages | 5 |
Journal | Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument |
Volume | 34 |
Issue number | 6 SUPPL. |
Publication status | Published - 2013 Jun |
Externally published | Yes |
Keywords
- ALD thin film
- MEMS transducer
- Nanocomposite PZT
ASJC Scopus subject areas
- Instrumentation