Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

Nobuyuki Futai; Kiyoshi Matsumoto; Isao Shimoyama

Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

Nobuyuki Futai, Kiyoshi Matsumoto, Isao Shimoyama

Research output: Contribution to conference › Paper › peer-review

Abstract

An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.

Original language	English
Pages	168-171
Number of pages	4
Publication status	Published - 2002 Jan 1
Externally published	Yes
Event	15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 - Las Vegas, NV, United States Duration: 2002 Jan 20 → 2002 Jan 24

Conference

Conference	15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002
Country/Territory	United States
City	Las Vegas, NV
Period	02/1/20 → 02/1/24

ASJC Scopus subject areas

Control and Systems Engineering
Mechanical Engineering
Electrical and Electronic Engineering

Cite this

Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist. / Futai, Nobuyuki; Matsumoto, Kiyoshi; Shimoyama, Isao.

2002. 168-171 Paper presented at 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002, Las Vegas, NV, United States.

Research output: Contribution to conference › Paper › peer-review

@conference{8f508b425f4b42ab82f5b1e19e75ba90,

title = "Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist",

abstract = "An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.",

author = "Nobuyuki Futai and Kiyoshi Matsumoto and Isao Shimoyama",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "168--171",

note = "15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 ; Conference date: 20-01-2002 Through 24-01-2002",

}

TY - CONF

T1 - Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

AU - Futai, Nobuyuki

AU - Matsumoto, Kiyoshi

AU - Shimoyama, Isao

PY - 2002/1/1

Y1 - 2002/1/1

N2 - An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.

AB - An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.

UR - http://www.scopus.com/inward/record.url?scp=0036197822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036197822&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036197822

SP - 168

EP - 171

T2 - 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002

Y2 - 20 January 2002 through 24 January 2002

ER -

Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

Abstract

Conference

ASJC Scopus subject areas

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