Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

Nobuyuki Futai, Kiyoshi Matsumoto, Isao Shimoyama

Research output: Contribution to conferencePaper

7 Citations (Scopus)

Abstract

An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.

Original languageEnglish
Pages168-171
Number of pages4
Publication statusPublished - 2002 Jan 1
Event15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 - Las Vegas, NV, United States
Duration: 2002 Jan 202002 Jan 24

Conference

Conference15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002
CountryUnited States
CityLas Vegas, NV
Period02/1/2002/1/24

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Futai, N., Matsumoto, K., & Shimoyama, I. (2002). Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist. 168-171. Paper presented at 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002, Las Vegas, NV, United States.