Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl5Intercalation

Ekkaphop Ketsombun, Tomoki Akimoto, Kazuyoshi Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Doped MLG is expected as an inductor material with high inductance density due to its high kinetic inductance. A practical fabrication process for doped MLG patterns is developed using a selective CVD on Ni catalyst patterns and stable MoCl5 intercalation. The highly doped MLG patterns of stage-2 were realized by CVD-MLG with a G/D ratio of 20 or more, and the sheet-resistance could be reduced.

Original languageEnglish
Title of host publication2021 IEEE International Interconnect Technology Conference, IITC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728176321
DOIs
Publication statusPublished - 2021 Jul 6
Event24th Annual IEEE International Interconnect Technology Conference, IITC 2021 - Virtual, Kyoto, Japan
Duration: 2021 Jul 62021 Jul 9

Publication series

Name2021 IEEE International Interconnect Technology Conference, IITC 2021

Conference

Conference24th Annual IEEE International Interconnect Technology Conference, IITC 2021
Country/TerritoryJapan
CityVirtual, Kyoto
Period21/7/621/7/9

Keywords

  • CVD
  • inductor
  • intercalation doping
  • MoCl
  • multilayer graphene

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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