Fabrication of nanowires by varying energy microbeam lithography using heavy ions at the TIARA

T. Kamiya, K. Takano, Y. Ishii, T. Satoh, M. Oikawa, T. Ohkubo, J. Haga, H. Nishikawa, Y. Furuta, N. Uchiya, S. Seki, M. Sugimoto

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


In TIARA facility of Japan Atomic Energy Agency (JAEA) Takasaki, we have produced three-dimensional micro/nano-structures with high aspect ratio using cross linking process based on negative resist such as SU-8 by a technique of mask less ion beam lithography. By bombarding high energy heavy ions such as 450 MeV Xe23+ to SU-8, on the other hand, it appeared that a nanowire could be produced just with a single ion hitting. Then we tried to produce nanowires, of which both ends were fixed in the three-dimensional structure. This paper shows a preliminary experiment for this purpose using a combination of 15 MeV Ni4+ ion microbeam patterning and the 450 MeV 129Xe23+ hitting on SU-8.

Original languageEnglish
Pages (from-to)2317-2320
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number12-13
Publication statusPublished - 2009 Jun 15


  • High aspect ratio
  • Ion microbeam systems
  • Lithography
  • Nanowires
  • Three-dimensional structure

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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