Fabrication of pierce-type nanocrystalline si electron-emitter array for massively parallel electron beam lithography

Hitoshi Nishino; Shinya Yoshida; Akira Kojima; Nokatsu Ikegami; Shuji Tanaka; Nobuyoshi Koshida; Masayoshi Esashi

doi:10.1541/ieejsmas.134.146

Fabrication of pierce-type nanocrystalline si electron-emitter array for massively parallel electron beam lithography

Hitoshi Nishino, Shinya Yoshida, Akira Kojima, Nokatsu Ikegami, Shuji Tanaka, Nobuyoshi Koshida, Masayoshi Esashi

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This paper reports on the fundamental process development of a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scaled integrated circuit (LSI). The emitter array consists of 100×100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operation voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array, the LSI and an extraction electrode plate was also developed based on Au-In and polymer bonding technologies.

Original language	English
Pages (from-to)	146-153
Number of pages	8
Journal	IEEJ Transactions on Sensors and Micromachines
Volume	134
Issue number	6
DOIs	https://doi.org/10.1541/ieejsmas.134.146
Publication status	Published - 2014
Externally published	Yes

Keywords

Electron emitter
MEMS
Nanocrystalline silicon
Pierce typed electron emitter

ASJC Scopus subject areas

Mechanical Engineering
Electrical and Electronic Engineering

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10.1541/ieejsmas.134.146

Cite this

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title = "Fabrication of pierce-type nanocrystalline si electron-emitter array for massively parallel electron beam lithography",

abstract = "This paper reports on the fundamental process development of a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scaled integrated circuit (LSI). The emitter array consists of 100×100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operation voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array, the LSI and an extraction electrode plate was also developed based on Au-In and polymer bonding technologies.",

keywords = "Electron emitter, MEMS, Nanocrystalline silicon, Pierce typed electron emitter",

author = "Hitoshi Nishino and Shinya Yoshida and Akira Kojima and Nokatsu Ikegami and Shuji Tanaka and Nobuyoshi Koshida and Masayoshi Esashi",

year = "2014",

doi = "10.1541/ieejsmas.134.146",

language = "English",

volume = "134",

pages = "146--153",

journal = "IEEJ Transactions on Sensors and Micromachines",

issn = "1341-8939",

publisher = "The Institute of Electrical Engineers of Japan",

number = "6",

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T1 - Fabrication of pierce-type nanocrystalline si electron-emitter array for massively parallel electron beam lithography

AU - Nishino, Hitoshi

AU - Yoshida, Shinya

AU - Kojima, Akira

AU - Ikegami, Nokatsu

AU - Tanaka, Shuji

AU - Koshida, Nobuyoshi

AU - Esashi, Masayoshi

PY - 2014

Y1 - 2014

N2 - This paper reports on the fundamental process development of a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scaled integrated circuit (LSI). The emitter array consists of 100×100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operation voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array, the LSI and an extraction electrode plate was also developed based on Au-In and polymer bonding technologies.

AB - This paper reports on the fundamental process development of a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scaled integrated circuit (LSI). The emitter array consists of 100×100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operation voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array, the LSI and an extraction electrode plate was also developed based on Au-In and polymer bonding technologies.

KW - Electron emitter

KW - MEMS

KW - Nanocrystalline silicon

KW - Pierce typed electron emitter

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Fabrication of pierce-type nanocrystalline si electron-emitter array for massively parallel electron beam lithography

Abstract

Keywords

ASJC Scopus subject areas

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