Fabrication of semiconductor laser for integration with optical isolator

Kazumasa Sakurai; Hideki Yokoi; Tetsuya Mizumoto; Daisuke Miyashita; Yoshiaki Nakano

doi:10.1143/JJAP.43.1388

Fabrication of semiconductor laser for integration with optical isolator

Kazumasa Sakurai, Hideki Yokoi, Tetsuya Mizumoto, Daisuke Miyashita, Yoshiaki Nakano

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.

Original language	English
Pages (from-to)	1388-1392
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.43.1388
Publication status	Published - 2004 Apr
Externally published	Yes

Keywords

Focused ion beam
Laser diode
Monolithic integration
Optical isolator
Selective-area growth
Wafer direct-bonding

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.43.1388

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title = "Fabrication of semiconductor laser for integration with optical isolator",

abstract = "As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.",

keywords = "Focused ion beam, Laser diode, Monolithic integration, Optical isolator, Selective-area growth, Wafer direct-bonding",

author = "Kazumasa Sakurai and Hideki Yokoi and Tetsuya Mizumoto and Daisuke Miyashita and Yoshiaki Nakano",

year = "2004",

month = apr,

doi = "10.1143/JJAP.43.1388",

language = "English",

volume = "43",

pages = "1388--1392",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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T1 - Fabrication of semiconductor laser for integration with optical isolator

AU - Sakurai, Kazumasa

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Miyashita, Daisuke

AU - Nakano, Yoshiaki

PY - 2004/4

Y1 - 2004/4

N2 - As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.

AB - As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.

KW - Focused ion beam

KW - Laser diode

KW - Monolithic integration

KW - Optical isolator

KW - Selective-area growth

KW - Wafer direct-bonding

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DO - 10.1143/JJAP.43.1388

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SP - 1388

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 A

ER -

Fabrication of semiconductor laser for integration with optical isolator

Abstract

Keywords

ASJC Scopus subject areas

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