Fabrication of semiconductor laser for integration with optical isolator

Kazumasa Sakurai; Hideki Yokoi; Tetsuya Mizumoto; Daisuke Miyashita; Yoshiaki Nakano

doi:10.1143/JJAP.43.1388

Fabrication of semiconductor laser for integration with optical isolator

Kazumasa Sakurai, Hideki Yokoi, Tetsuya Mizumoto, Daisuke Miyashita, Yoshiaki Nakano

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.

Original language	English
Pages (from-to)	1388-1392
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.43.1388
Publication status	Published - 2004 Apr
Externally published	Yes

Keywords

Focused ion beam
Laser diode
Monolithic integration
Optical isolator
Selective-area growth
Wafer direct-bonding

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Fabrication of semiconductor laser for integration with optical isolator. / Sakurai, Kazumasa; Yokoi, Hideki; Mizumoto, Tetsuya; Miyashita, Daisuke; Nakano, Yoshiaki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 A, 04.2004, p. 1388-1392.

Research output: Contribution to journal › Article › peer-review

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