Abstract
As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.
Original language | English |
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Pages (from-to) | 1388-1392 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 43 |
Issue number | 4 A |
DOIs | |
Publication status | Published - 2004 Apr |
Externally published | Yes |
Keywords
- Focused ion beam
- Laser diode
- Monolithic integration
- Optical isolator
- Selective-area growth
- Wafer direct-bonding
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)