Abstract
As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.
| Original language | English |
|---|---|
| Pages (from-to) | 1388-1392 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 4 A |
| Publication status | Published - 2004 Apr |
| Externally published | Yes |
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Keywords
- Focused ion beam
- Laser diode
- Monolithic integration
- Optical isolator
- Selective-area growth
- Wafer direct-bonding
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Fabrication of semiconductor laser for integration with optical isolator. / Sakurai, Kazumasa; Yokoi, Hideki; Mizumoto, Tetsuya; Miyashita, Daisuke; Nakano, Yoshiaki.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 A, 04.2004, p. 1388-1392.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of semiconductor laser for integration with optical isolator
AU - Sakurai, Kazumasa
AU - Yokoi, Hideki
AU - Mizumoto, Tetsuya
AU - Miyashita, Daisuke
AU - Nakano, Yoshiaki
PY - 2004/4
Y1 - 2004/4
N2 - As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.
AB - As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.
KW - Focused ion beam
KW - Laser diode
KW - Monolithic integration
KW - Optical isolator
KW - Selective-area growth
KW - Wafer direct-bonding
UR - http://www.scopus.com/inward/record.url?scp=3042731002&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3042731002&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:3042731002
VL - 43
SP - 1388
EP - 1392
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 A
ER -