Abstract
As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.
| Original language | English |
|---|---|
| Pages (from-to) | 1388-1392 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 4 A |
| Publication status | Published - 2004 Apr |
| Externally published | Yes |
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Keywords
- Focused ion beam
- Laser diode
- Monolithic integration
- Optical isolator
- Selective-area growth
- Wafer direct-bonding
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Sakurai, K., Yokoi, H., Mizumoto, T., Miyashita, D., & Nakano, Y. (2004). Fabrication of semiconductor laser for integration with optical isolator. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43(4 A), 1388-1392.