Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array

Naokatsu Ikegami; Takashi Yoshida; Akira Kojima; Hiroshi Miyaguchi; Masanori Muroyama; Shinya Yoshida; Kentaro Totsu; Nobuyoshi Koshida; Masayoshi Esashi

doi:10.1109/NEMS.2016.7758318

Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array

Naokatsu Ikegami, Takashi Yoshida, Akira Kojima, Hiroshi Miyaguchi, Masanori Muroyama, Shinya Yoshida, Kentaro Totsu, Nobuyoshi Koshida, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n⁺⁺-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si layer. Electrons could be effectively injected into the nc-Si layer from the back-side n⁺⁺-poly-Si through the TSV plugs, and were quasi-ballistically emitted through the surface Ti/Au electrode.

Original language	English
Title of host publication	2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	578-582
Number of pages	5
ISBN (Electronic)	9781509019472
DOIs	https://doi.org/10.1109/NEMS.2016.7758318
Publication status	Published - 2016 Nov 28
Externally published	Yes
Event	11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016 - Sendai, Japan Duration: 2016 Apr 17 → 2016 Apr 20

Publication series

Name	2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016

Conference

Conference	11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
Country/Territory	Japan
City	Sendai
Period	16/4/17 → 16/4/20

ASJC Scopus subject areas

Industrial and Manufacturing Engineering
Mechanical Engineering
Mechanics of Materials
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/NEMS.2016.7758318

Cite this

Ikegami, N., Yoshida, T., Kojima, A., Miyaguchi, H., Muroyama, M., Yoshida, S., Totsu, K., Koshida, N., & Esashi, M. (2016). Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array. In 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016 (pp. 578-582). [7758318] (2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS.2016.7758318

Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array. / Ikegami, Naokatsu; Yoshida, Takashi; Kojima, Akira et al.

2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 578-582 7758318 (2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ikegami, N, Yoshida, T, Kojima, A, Miyaguchi, H, Muroyama, M, Yoshida, S, Totsu, K, Koshida, N & Esashi, M 2016, Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array. in 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016., 7758318, 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016, Institute of Electrical and Electronics Engineers Inc., pp. 578-582, 11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016, Sendai, Japan, 16/4/17. https://doi.org/10.1109/NEMS.2016.7758318

Ikegami N, Yoshida T, Kojima A, Miyaguchi H, Muroyama M, Yoshida S et al. Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array. In 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 578-582. 7758318. (2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016). doi: 10.1109/NEMS.2016.7758318

Ikegami, Naokatsu ; Yoshida, Takashi ; Kojima, Akira et al. / Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array. 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 578-582 (2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016).

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title = "Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array",

abstract = "Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n++-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si layer. Electrons could be effectively injected into the nc-Si layer from the back-side n++-poly-Si through the TSV plugs, and were quasi-ballistically emitted through the surface Ti/Au electrode.",

author = "Naokatsu Ikegami and Takashi Yoshida and Akira Kojima and Hiroshi Miyaguchi and Masanori Muroyama and Shinya Yoshida and Kentaro Totsu and Nobuyoshi Koshida and Masayoshi Esashi",

note = "Funding Information: This work was granted by the Japan Science and Technology Agency (JST) through the {"}R&D Center of Excellence for Integrated Microsystem{"} in the {"}Creation of Innovation Centers for Advanced Interdisciplinary Research Areas Program{"} initiated by the Ministry of Education, Culture, Sports, Science and Technology (MEXT). This work was also granted by the Japan Society for the Promotion of Science (JSPS) through the {"}Funding Program for World- Leading Innovative R&D on Science and Technology (FIRST Program){"}, initiated by the Council for Science and Technology Policy (CSTP). The fabrication in this work was performed in Hands-on Access Fabrication Facility, a member of {"}Nanotechnology Platform of the MEXT, at the Center for Integrated Nanotechnology Support, Tohoku University. Publisher Copyright: {\textcopyright} 2016 IEEE.; 11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016 ; Conference date: 17-04-2016 Through 20-04-2016",

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doi = "10.1109/NEMS.2016.7758318",

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AU - Ikegami, Naokatsu

AU - Yoshida, Takashi

AU - Kojima, Akira

AU - Miyaguchi, Hiroshi

AU - Muroyama, Masanori

AU - Yoshida, Shinya

AU - Totsu, Kentaro

AU - Koshida, Nobuyoshi

AU - Esashi, Masayoshi

N1 - Funding Information: This work was granted by the Japan Science and Technology Agency (JST) through the "R&D Center of Excellence for Integrated Microsystem" in the "Creation of Innovation Centers for Advanced Interdisciplinary Research Areas Program" initiated by the Ministry of Education, Culture, Sports, Science and Technology (MEXT). This work was also granted by the Japan Society for the Promotion of Science (JSPS) through the "Funding Program for World- Leading Innovative R&D on Science and Technology (FIRST Program)", initiated by the Council for Science and Technology Policy (CSTP). The fabrication in this work was performed in Hands-on Access Fabrication Facility, a member of "Nanotechnology Platform of the MEXT, at the Center for Integrated Nanotechnology Support, Tohoku University. Publisher Copyright: © 2016 IEEE.

PY - 2016/11/28

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N2 - Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n++-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si layer. Electrons could be effectively injected into the nc-Si layer from the back-side n++-poly-Si through the TSV plugs, and were quasi-ballistically emitted through the surface Ti/Au electrode.

AB - Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n++-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si layer. Electrons could be effectively injected into the nc-Si layer from the back-side n++-poly-Si through the TSV plugs, and were quasi-ballistically emitted through the surface Ti/Au electrode.

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Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array

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