Far- and mid-infrared absorption study of HfO2/SiO 2/Si system

A. Toriumi, K. Tomida, H. Shimizu, K. Kita, Kentaro Kyuno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper discusses thermal stability and bonding characteristics of HfO2 in comparison with those of SiO2 through the infrared absorption study with Fourier Transform Infrared (FT-IR) measurement. X-ray diffraction study was also performed to determine the macroscopic crystal structure. HfO2: films on (100) Si wafers were prepared by rf-sputtering in Ar or reactive de-sputtering in O2. Since the high dielectric constant dominantly originates from the bonding characteristics of HfO2, which are closely related to the infrared active vibration modes, the infrared absorption characteristics are fundamentally important material properties of high-k dielectrics. The far-infrared region study is especially important for investigating high-k films, since high-k dielectrics are generally heavy metal oxides, and show characteristic infrared absorption peaks in the far-infrared region. The interface layer underneath the HfO 2 film was also studied by the transmission FT-IR. In addition, by introducing a small amount of other atoms into HfO2, the infrared absorption spectrum is dramatically changed. This fact implies that the high-k film structure is sensitive to an external perturbation. It will be an advantage as well as a disadvantage in high-k gate stack technology for advanced CMOS, and is discussed from the viewpoints of the phase separation and the phase transformation of HfO2.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsR.E. Sah, M.J. Deen, J. Zhang, J. Yota, Y. Kamakura
Pages471-481
Number of pages11
VolumePV 2005-01
Publication statusPublished - 2005
Externally publishedYes
Event207th ECS Meeting - Quebec
Duration: 2005 May 162005 May 20

Other

Other207th ECS Meeting
CityQuebec
Period05/5/1605/5/20

Fingerprint

Infrared absorption
Infrared radiation
Sputtering
Fourier transforms
Phase separation
Heavy metals
Absorption spectra
Materials properties
Thermodynamic stability
Permittivity
Crystal structure
Phase transitions
X ray diffraction
Atoms
Oxides
High-k dielectric

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Toriumi, A., Tomida, K., Shimizu, H., Kita, K., & Kyuno, K. (2005). Far- and mid-infrared absorption study of HfO2/SiO 2/Si system. In R. E. Sah, M. J. Deen, J. Zhang, J. Yota, & Y. Kamakura (Eds.), Proceedings - Electrochemical Society (Vol. PV 2005-01, pp. 471-481)

Far- and mid-infrared absorption study of HfO2/SiO 2/Si system. / Toriumi, A.; Tomida, K.; Shimizu, H.; Kita, K.; Kyuno, Kentaro.

Proceedings - Electrochemical Society. ed. / R.E. Sah; M.J. Deen; J. Zhang; J. Yota; Y. Kamakura. Vol. PV 2005-01 2005. p. 471-481.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Toriumi, A, Tomida, K, Shimizu, H, Kita, K & Kyuno, K 2005, Far- and mid-infrared absorption study of HfO2/SiO 2/Si system. in RE Sah, MJ Deen, J Zhang, J Yota & Y Kamakura (eds), Proceedings - Electrochemical Society. vol. PV 2005-01, pp. 471-481, 207th ECS Meeting, Quebec, 05/5/16.
Toriumi A, Tomida K, Shimizu H, Kita K, Kyuno K. Far- and mid-infrared absorption study of HfO2/SiO 2/Si system. In Sah RE, Deen MJ, Zhang J, Yota J, Kamakura Y, editors, Proceedings - Electrochemical Society. Vol. PV 2005-01. 2005. p. 471-481
Toriumi, A. ; Tomida, K. ; Shimizu, H. ; Kita, K. ; Kyuno, Kentaro. / Far- and mid-infrared absorption study of HfO2/SiO 2/Si system. Proceedings - Electrochemical Society. editor / R.E. Sah ; M.J. Deen ; J. Zhang ; J. Yota ; Y. Kamakura. Vol. PV 2005-01 2005. pp. 471-481
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AB - This paper discusses thermal stability and bonding characteristics of HfO2 in comparison with those of SiO2 through the infrared absorption study with Fourier Transform Infrared (FT-IR) measurement. X-ray diffraction study was also performed to determine the macroscopic crystal structure. HfO2: films on (100) Si wafers were prepared by rf-sputtering in Ar or reactive de-sputtering in O2. Since the high dielectric constant dominantly originates from the bonding characteristics of HfO2, which are closely related to the infrared active vibration modes, the infrared absorption characteristics are fundamentally important material properties of high-k dielectrics. The far-infrared region study is especially important for investigating high-k films, since high-k dielectrics are generally heavy metal oxides, and show characteristic infrared absorption peaks in the far-infrared region. The interface layer underneath the HfO 2 film was also studied by the transmission FT-IR. In addition, by introducing a small amount of other atoms into HfO2, the infrared absorption spectrum is dramatically changed. This fact implies that the high-k film structure is sensitive to an external perturbation. It will be an advantage as well as a disadvantage in high-k gate stack technology for advanced CMOS, and is discussed from the viewpoints of the phase separation and the phase transformation of HfO2.

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