Fatigue life enhancement of low silver content Sn-Ag-Cu flip-chip interconnects by Ni addition

Yoshiharu Kariya, Takuya Hosoi, Takashi Kimura, Shinichi Terashima, Masamoto Tanaka, Tadatomo Suga

Research output: Contribution to conferencePaper

4 Citations (Scopus)

Abstract

The mechanical shear fatigue test has been performed to investigate the fatigue properties of Sn-1.2mass%Ag-0.5mass%Cu-0.05mass%Ni for flip chip interconnections. The low cycle fatigue endurance of the alloy is almost equivalent to that of Sn-3mass%Ag-0.5mass%Cu alloy, even though the fatigue endurance of Sn-lmass%Ag-0.5mass%Cu alloy was poorer than that of the 3mass%Ag alloy. Adding Ni to low silver content Sn-Ag-Cu alloy leaded to fine microstructure, and the microstructure had a network structure of Ag3Sn intermetallic compound together with fine Cu-Sn intermetallic compound. The microstructure resulted in high strain hardening exponents, which leaded to good low cycle fatigue endurance of the alloy.

Original languageEnglish
Pages103-108
Number of pages6
Publication statusPublished - 2004 Sep 20
EventITherm 2004 - Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems - Las Vegas, NV, United States
Duration: 2004 Jun 12004 Jun 4

Conference

ConferenceITherm 2004 - Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems
CountryUnited States
CityLas Vegas, NV
Period04/6/104/6/4

Keywords

  • BGA joints
  • Fatigue life
  • Flip-chip
  • Lead-free solder
  • Low silver content
  • Ni addition
  • Shear Fatigue
  • Sn-Ag-Cu

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Kariya, Y., Hosoi, T., Kimura, T., Terashima, S., Tanaka, M., & Suga, T. (2004). Fatigue life enhancement of low silver content Sn-Ag-Cu flip-chip interconnects by Ni addition. 103-108. Paper presented at ITherm 2004 - Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, Las Vegas, NV, United States.