Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding

H. Yokoi; T. Mizumoto; N. Shinjo; N. Futakuchi; N. Kaida; Y. Nakano

doi:10.1049/ip-opt:19990446

Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding

H. Yokoi, T. Mizumoto, N. Shinjo, N. Futakuchi, N. Kaida, Y. Nakano

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

An integrated optical isolator, employing a nonreciprocal phase shift, fabricated by wafer direct bonding technique is proposed. The optical isolator has an optical interferometer, which is composed of two tapered couplers, nonreciprocal phase shifters in two arms and a reciprocal phase shifter in one of the arms. The magneto-optic waveguide in the nonreciprocal phase shifter has a magnetic garnet/GaInAsP/InP structure, which is realized by the direct bonding technique. The theoretical and experimental results of the components for the isolator are demonstrated to investigate the feasibility of this device.

Original language	English
Pages (from-to)	105-110
Number of pages	6
Journal	IEE Proceedings: Optoelectronics
Volume	146
Issue number	2
DOIs	https://doi.org/10.1049/ip-opt:19990446
Publication status	Published - 1999 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Computer Networks and Communications
Electrical and Electronic Engineering

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10.1049/ip-opt:19990446

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abstract = "An integrated optical isolator, employing a nonreciprocal phase shift, fabricated by wafer direct bonding technique is proposed. The optical isolator has an optical interferometer, which is composed of two tapered couplers, nonreciprocal phase shifters in two arms and a reciprocal phase shifter in one of the arms. The magneto-optic waveguide in the nonreciprocal phase shifter has a magnetic garnet/GaInAsP/InP structure, which is realized by the direct bonding technique. The theoretical and experimental results of the components for the isolator are demonstrated to investigate the feasibility of this device.",

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AU - Yokoi, H.

AU - Mizumoto, T.

AU - Shinjo, N.

AU - Futakuchi, N.

AU - Kaida, N.

AU - Nakano, Y.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - An integrated optical isolator, employing a nonreciprocal phase shift, fabricated by wafer direct bonding technique is proposed. The optical isolator has an optical interferometer, which is composed of two tapered couplers, nonreciprocal phase shifters in two arms and a reciprocal phase shifter in one of the arms. The magneto-optic waveguide in the nonreciprocal phase shifter has a magnetic garnet/GaInAsP/InP structure, which is realized by the direct bonding technique. The theoretical and experimental results of the components for the isolator are demonstrated to investigate the feasibility of this device.

AB - An integrated optical isolator, employing a nonreciprocal phase shift, fabricated by wafer direct bonding technique is proposed. The optical isolator has an optical interferometer, which is composed of two tapered couplers, nonreciprocal phase shifters in two arms and a reciprocal phase shifter in one of the arms. The magneto-optic waveguide in the nonreciprocal phase shifter has a magnetic garnet/GaInAsP/InP structure, which is realized by the direct bonding technique. The theoretical and experimental results of the components for the isolator are demonstrated to investigate the feasibility of this device.

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Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding

Abstract

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