Feasibility of plasma nitriding for effective surface treatment of pure aluminum

Patama Visuttipitukul, Tatsuhiko Aizawa, Hideyuki Kuwahara

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Cast aluminum with 99.99% purity was successfully plasma nitrided using nitrogen and hydrogen mixed gas. Pre-sputtering was carried out prior to plasma nitriding in order to eliminate surface oxide film. Sputtering and nitriding durations were varied from 3.6 to 18 ks and 72 ks to 252 ks, respectively. The samples were nitrided at 823 and 873 K to observe the effect of nitriding temperature. The nitrided samples were analyzed by GIXD, XPS, and TEM. Through GIXD and XPS results, formation of AlN was distinctly detected as a nitrided surface. Cross-sectional microstructure of nitrided samples showed that AlN was formed with the thickness up to 3-5 μm. AlN formation is controlled by the diffusion process. The thickness of AlN layer was determined by the nitriding time and temperature. Partial degradation of AlN in the vicinity of the free surface occurred due to its reaction with moisture in air. Partial detachment of AlN layer occurred due to the residual thermal stress, which was caused by the difference in thermal expansion coefficient between AlN and substrate of Al.

Original languageEnglish
Pages (from-to)1412-1418
Number of pages7
JournalMaterials Transactions
Volume44
Issue number7
Publication statusPublished - 2003 Jul
Externally publishedYes

Fingerprint

nitriding
Nitriding
surface treatment
Aluminum
Surface treatment
aluminum
Plasmas
Sputtering
X ray photoelectron spectroscopy
sputtering
thermal stresses
detachment
Thermal stress
moisture
Oxide films
residual stress
Thermal expansion
oxide films
casts
Hydrogen

Keywords

  • Aluminum
  • Aluminum nitride
  • Plasma nitriding
  • Sputtering

ASJC Scopus subject areas

  • Materials Science(all)
  • Metals and Alloys

Cite this

Visuttipitukul, P., Aizawa, T., & Kuwahara, H. (2003). Feasibility of plasma nitriding for effective surface treatment of pure aluminum. Materials Transactions, 44(7), 1412-1418.

Feasibility of plasma nitriding for effective surface treatment of pure aluminum. / Visuttipitukul, Patama; Aizawa, Tatsuhiko; Kuwahara, Hideyuki.

In: Materials Transactions, Vol. 44, No. 7, 07.2003, p. 1412-1418.

Research output: Contribution to journalArticle

Visuttipitukul, P, Aizawa, T & Kuwahara, H 2003, 'Feasibility of plasma nitriding for effective surface treatment of pure aluminum', Materials Transactions, vol. 44, no. 7, pp. 1412-1418.
Visuttipitukul P, Aizawa T, Kuwahara H. Feasibility of plasma nitriding for effective surface treatment of pure aluminum. Materials Transactions. 2003 Jul;44(7):1412-1418.
Visuttipitukul, Patama ; Aizawa, Tatsuhiko ; Kuwahara, Hideyuki. / Feasibility of plasma nitriding for effective surface treatment of pure aluminum. In: Materials Transactions. 2003 ; Vol. 44, No. 7. pp. 1412-1418.
@article{f391b3ad8d7c44229134fa8178a32cef,
title = "Feasibility of plasma nitriding for effective surface treatment of pure aluminum",
abstract = "Cast aluminum with 99.99{\%} purity was successfully plasma nitrided using nitrogen and hydrogen mixed gas. Pre-sputtering was carried out prior to plasma nitriding in order to eliminate surface oxide film. Sputtering and nitriding durations were varied from 3.6 to 18 ks and 72 ks to 252 ks, respectively. The samples were nitrided at 823 and 873 K to observe the effect of nitriding temperature. The nitrided samples were analyzed by GIXD, XPS, and TEM. Through GIXD and XPS results, formation of AlN was distinctly detected as a nitrided surface. Cross-sectional microstructure of nitrided samples showed that AlN was formed with the thickness up to 3-5 μm. AlN formation is controlled by the diffusion process. The thickness of AlN layer was determined by the nitriding time and temperature. Partial degradation of AlN in the vicinity of the free surface occurred due to its reaction with moisture in air. Partial detachment of AlN layer occurred due to the residual thermal stress, which was caused by the difference in thermal expansion coefficient between AlN and substrate of Al.",
keywords = "Aluminum, Aluminum nitride, Plasma nitriding, Sputtering",
author = "Patama Visuttipitukul and Tatsuhiko Aizawa and Hideyuki Kuwahara",
year = "2003",
month = "7",
language = "English",
volume = "44",
pages = "1412--1418",
journal = "Materials Transactions",
issn = "1345-9678",
publisher = "Japan Institute of Metals (JIM)",
number = "7",

}

TY - JOUR

T1 - Feasibility of plasma nitriding for effective surface treatment of pure aluminum

AU - Visuttipitukul, Patama

AU - Aizawa, Tatsuhiko

AU - Kuwahara, Hideyuki

PY - 2003/7

Y1 - 2003/7

N2 - Cast aluminum with 99.99% purity was successfully plasma nitrided using nitrogen and hydrogen mixed gas. Pre-sputtering was carried out prior to plasma nitriding in order to eliminate surface oxide film. Sputtering and nitriding durations were varied from 3.6 to 18 ks and 72 ks to 252 ks, respectively. The samples were nitrided at 823 and 873 K to observe the effect of nitriding temperature. The nitrided samples were analyzed by GIXD, XPS, and TEM. Through GIXD and XPS results, formation of AlN was distinctly detected as a nitrided surface. Cross-sectional microstructure of nitrided samples showed that AlN was formed with the thickness up to 3-5 μm. AlN formation is controlled by the diffusion process. The thickness of AlN layer was determined by the nitriding time and temperature. Partial degradation of AlN in the vicinity of the free surface occurred due to its reaction with moisture in air. Partial detachment of AlN layer occurred due to the residual thermal stress, which was caused by the difference in thermal expansion coefficient between AlN and substrate of Al.

AB - Cast aluminum with 99.99% purity was successfully plasma nitrided using nitrogen and hydrogen mixed gas. Pre-sputtering was carried out prior to plasma nitriding in order to eliminate surface oxide film. Sputtering and nitriding durations were varied from 3.6 to 18 ks and 72 ks to 252 ks, respectively. The samples were nitrided at 823 and 873 K to observe the effect of nitriding temperature. The nitrided samples were analyzed by GIXD, XPS, and TEM. Through GIXD and XPS results, formation of AlN was distinctly detected as a nitrided surface. Cross-sectional microstructure of nitrided samples showed that AlN was formed with the thickness up to 3-5 μm. AlN formation is controlled by the diffusion process. The thickness of AlN layer was determined by the nitriding time and temperature. Partial degradation of AlN in the vicinity of the free surface occurred due to its reaction with moisture in air. Partial detachment of AlN layer occurred due to the residual thermal stress, which was caused by the difference in thermal expansion coefficient between AlN and substrate of Al.

KW - Aluminum

KW - Aluminum nitride

KW - Plasma nitriding

KW - Sputtering

UR - http://www.scopus.com/inward/record.url?scp=0042282644&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042282644&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0042282644

VL - 44

SP - 1412

EP - 1418

JO - Materials Transactions

JF - Materials Transactions

SN - 1345-9678

IS - 7

ER -