Femtosecond laser-induced ripple structures in semiconductor materials

Takuro Tomita; Keita Kinoshita; Toshiaki Murai; Yasuhiro Fukumori; Shigeki Matsuo; Shuichi Hashimoto

doi:10.2961/jlmn.2007.02.0007

Femtosecond laser-induced ripple structures in semiconductor materials

Takuro Tomita, Keita Kinoshita, Toshiaki Murai, Yasuhiro Fukumori, Shigeki Matsuo, Shuichi Hashimoto

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Femtosecond laser-induced ripple structures were fabricated on semiconductor materials such as silicon and silicon carbide. While a coarse ripple was observed on both materials under the proper irradiation conditions, a fine ripple was observed only on the silicon carbide. The cross-sectional profile of ripple structure was examined by scanning electron microscopy with sliced or tilted sam-ples. Based on the experimental observations, the formation mechanism of the ripple structure was discussed.

Original language	English
Pages (from-to)	141-145
Number of pages	5
Journal	Journal of Laser Micro Nanoengineering
Volume	2
Issue number	2
DOIs	https://doi.org/10.2961/jlmn.2007.02.0007
Publication status	Published - 2007 Jun 1
Externally published	Yes

Keywords

Femtosecond laser
Ripple
Silicon
Silicon carbide
Threshold

ASJC Scopus subject areas

Instrumentation
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.2961/jlmn.2007.02.0007

Cite this

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title = "Femtosecond laser-induced ripple structures in semiconductor materials",

abstract = "Femtosecond laser-induced ripple structures were fabricated on semiconductor materials such as silicon and silicon carbide. While a coarse ripple was observed on both materials under the proper irradiation conditions, a fine ripple was observed only on the silicon carbide. The cross-sectional profile of ripple structure was examined by scanning electron microscopy with sliced or tilted sam-ples. Based on the experimental observations, the formation mechanism of the ripple structure was discussed.",

keywords = "Femtosecond laser, Ripple, Silicon, Silicon carbide, Threshold",

author = "Takuro Tomita and Keita Kinoshita and Toshiaki Murai and Yasuhiro Fukumori and Shigeki Matsuo and Shuichi Hashimoto",

note = "Funding Information: This research is partially supported by a Grant-in-aid from Japanese Ministry of Education, Culture, Sports, Science and Technology (17760056), and the faculty project of engineering in The University of Tokushima. We also thank Dr. Makoto Yamaguchi in the Technical Research Institute JAPAN Society for the Promotion of Machine Industry for technical assistance and fruitful discussions. Publisher Copyright: {\textcopyright} 2007 Japan Laser Processing Society.",

year = "2007",

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doi = "10.2961/jlmn.2007.02.0007",

language = "English",

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T1 - Femtosecond laser-induced ripple structures in semiconductor materials

AU - Tomita, Takuro

AU - Kinoshita, Keita

AU - Murai, Toshiaki

AU - Fukumori, Yasuhiro

AU - Matsuo, Shigeki

AU - Hashimoto, Shuichi

N1 - Funding Information: This research is partially supported by a Grant-in-aid from Japanese Ministry of Education, Culture, Sports, Science and Technology (17760056), and the faculty project of engineering in The University of Tokushima. We also thank Dr. Makoto Yamaguchi in the Technical Research Institute JAPAN Society for the Promotion of Machine Industry for technical assistance and fruitful discussions. Publisher Copyright: © 2007 Japan Laser Processing Society.

PY - 2007/6/1

Y1 - 2007/6/1

N2 - Femtosecond laser-induced ripple structures were fabricated on semiconductor materials such as silicon and silicon carbide. While a coarse ripple was observed on both materials under the proper irradiation conditions, a fine ripple was observed only on the silicon carbide. The cross-sectional profile of ripple structure was examined by scanning electron microscopy with sliced or tilted sam-ples. Based on the experimental observations, the formation mechanism of the ripple structure was discussed.

AB - Femtosecond laser-induced ripple structures were fabricated on semiconductor materials such as silicon and silicon carbide. While a coarse ripple was observed on both materials under the proper irradiation conditions, a fine ripple was observed only on the silicon carbide. The cross-sectional profile of ripple structure was examined by scanning electron microscopy with sliced or tilted sam-ples. Based on the experimental observations, the formation mechanism of the ripple structure was discussed.

KW - Femtosecond laser

KW - Ripple

KW - Silicon

KW - Silicon carbide

KW - Threshold

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Femtosecond laser-induced ripple structures in semiconductor materials

Abstract

Keywords

ASJC Scopus subject areas

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