Femtosecond laser-induced ripple structures in semiconductor materials

Takuro Tomita, Keita Kinoshita, Toshiaki Murai, Yasuhiro Fukumori, Shigeki Matsuo, Shuichi Hashimoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Femtosecond laser-induced ripple structures were fabricated on semiconductor materials such as silicon and silicon carbide. While a coarse ripple was observed on both materials under the proper irradiation conditions, a fine ripple was observed only on the silicon carbide. The cross-sectional profile of ripple structure was examined by scanning electron microscopy with sliced or tilted sam-ples. Based on the experimental observations, the formation mechanism of the ripple structure was discussed.

Original languageEnglish
Pages (from-to)141-145
Number of pages5
JournalJournal of Laser Micro Nanoengineering
Volume2
Issue number2
DOIs
Publication statusPublished - 2007 Jun 1
Externally publishedYes

Fingerprint

Ultrashort pulses
ripples
Silicon carbide
Semiconductor materials
lasers
silicon carbides
Irradiation
Silicon
Scanning electron microscopy
scanning electron microscopy
irradiation
silicon
profiles

Keywords

  • Femtosecond laser
  • Ripple
  • Silicon
  • Silicon carbide
  • Threshold

ASJC Scopus subject areas

  • Instrumentation
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Femtosecond laser-induced ripple structures in semiconductor materials. / Tomita, Takuro; Kinoshita, Keita; Murai, Toshiaki; Fukumori, Yasuhiro; Matsuo, Shigeki; Hashimoto, Shuichi.

In: Journal of Laser Micro Nanoengineering, Vol. 2, No. 2, 01.06.2007, p. 141-145.

Research output: Contribution to journalArticle

Tomita, Takuro ; Kinoshita, Keita ; Murai, Toshiaki ; Fukumori, Yasuhiro ; Matsuo, Shigeki ; Hashimoto, Shuichi. / Femtosecond laser-induced ripple structures in semiconductor materials. In: Journal of Laser Micro Nanoengineering. 2007 ; Vol. 2, No. 2. pp. 141-145.
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