@inproceedings{4efb252c67d248a780b8ea97d74f65fc,
title = "Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC",
abstract = "Femtosecond laser modification was used to enhance the local electrical conductivities in silicon carbide (SiC). Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts on SiC. The currents of modified lines increased more than six orders of magnitude when compared with those of the non-irradiated SiC. The current sharply increased in the fluence range from 3.3 to 6.7J/cm 2. From the I-V characteristics and scanning elctroron microscope (SEM) observations, we conclude that the modification related to the formation of the classical laser-induced periodic structures causes the drastic increase of electrical conductivities.",
keywords = "Electric conductivity, Femtosecond laser processing, Silicon carbide",
author = "Manato Deki and Minoru Yamamoto and Takuto Ito and Takuro Tomita and Shigeki Matsuo and Shuichi Hashimoto and Takahiro Kitada and Toshiro Isu and Shinobu Onoda and Takeshi Ohshima",
year = "2011",
month = dec,
day = "1",
doi = "10.1063/1.3666285",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "119--120",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}