Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC

Manato Deki, Minoru Yamamoto, Takuto Ito, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Takahiro Kitada, Toshiro Isu, Shinobu Onoda, Takeshi Ohshima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Femtosecond laser modification was used to enhance the local electrical conductivities in silicon carbide (SiC). Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts on SiC. The currents of modified lines increased more than six orders of magnitude when compared with those of the non-irradiated SiC. The current sharply increased in the fluence range from 3.3 to 6.7J/cm 2. From the I-V characteristics and scanning elctroron microscope (SEM) observations, we conclude that the modification related to the formation of the classical laser-induced periodic structures causes the drastic increase of electrical conductivities.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages119-120
Number of pages2
Volume1399
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul
Duration: 2010 Jul 252010 Jul 30

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CitySeoul
Period10/7/2510/7/30

Fingerprint

silicon carbides
conductivity
augmentation
lasers
electrical resistivity
electric contacts
fluence
microscopes
scanning
causes
electric potential
metals
ions

Keywords

  • Electric conductivity
  • Femtosecond laser processing
  • Silicon carbide

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Deki, M., Yamamoto, M., Ito, T., Tomita, T., Matsuo, S., Hashimoto, S., ... Ohshima, T. (2011). Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC. In AIP Conference Proceedings (Vol. 1399, pp. 119-120) https://doi.org/10.1063/1.3666285

Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC. / Deki, Manato; Yamamoto, Minoru; Ito, Takuto; Tomita, Takuro; Matsuo, Shigeki; Hashimoto, Shuichi; Kitada, Takahiro; Isu, Toshiro; Onoda, Shinobu; Ohshima, Takeshi.

AIP Conference Proceedings. Vol. 1399 2011. p. 119-120.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Deki, M, Yamamoto, M, Ito, T, Tomita, T, Matsuo, S, Hashimoto, S, Kitada, T, Isu, T, Onoda, S & Ohshima, T 2011, Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC. in AIP Conference Proceedings. vol. 1399, pp. 119-120, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, 10/7/25. https://doi.org/10.1063/1.3666285
Deki M, Yamamoto M, Ito T, Tomita T, Matsuo S, Hashimoto S et al. Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC. In AIP Conference Proceedings. Vol. 1399. 2011. p. 119-120 https://doi.org/10.1063/1.3666285
Deki, Manato ; Yamamoto, Minoru ; Ito, Takuto ; Tomita, Takuro ; Matsuo, Shigeki ; Hashimoto, Shuichi ; Kitada, Takahiro ; Isu, Toshiro ; Onoda, Shinobu ; Ohshima, Takeshi. / Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC. AIP Conference Proceedings. Vol. 1399 2011. pp. 119-120
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AU - Hashimoto, Shuichi

AU - Kitada, Takahiro

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