Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC

Manato Deki, Minoru Yamamoto, Takuto Ito, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Takahiro Kitada, Toshiro Isu, Shinobu Onoda, Takeshi Ohshima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Femtosecond laser modification was used to enhance the local electrical conductivities in silicon carbide (SiC). Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts on SiC. The currents of modified lines increased more than six orders of magnitude when compared with those of the non-irradiated SiC. The current sharply increased in the fluence range from 3.3 to 6.7J/cm 2. From the I-V characteristics and scanning elctroron microscope (SEM) observations, we conclude that the modification related to the formation of the classical laser-induced periodic structures causes the drastic increase of electrical conductivities.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages119-120
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Externally publishedYes
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10/7/2510/7/30

Keywords

  • Electric conductivity
  • Femtosecond laser processing
  • Silicon carbide

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Deki, M., Yamamoto, M., Ito, T., Tomita, T., Matsuo, S., Hashimoto, S., Kitada, T., Isu, T., Onoda, S., & Ohshima, T. (2011). Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 119-120). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666285