Fermi level shift in la1-xSrxMO3 (M=Mn, Fe, Co, and Ni) probed by Schottky-like heteroepitaxial junctions with SrTi 0.99Nb0.01O3

A. Sawa, A. Yamamoto, H. Yamada, T. Fujii, M. Kawasaki, J. Matsuno, Y. Tokura

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Abstract

The authors have studied electrical properties of perovskite heteroepitaxial junctions consisting of transition metal oxides La 1-xSrxMO3 (LSMO: M=Mn, Fe, Co, and Ni) and an n-type semiconductor SrTi0.99Nb0.01O3 (Nb:STO). The junctions showed rectifying current-voltage characteristics that could be analyzed by taking into account a Schottky-like barrier formed in the Nb:STO at the interfaces. As the doping level x is increased, the Schottky barrier height and built-in potential increase as ∼x (eV), indicating the downward shift of the Fermi level position in the LSMO. The Fermi level position in the LSMO with the same doping level x tends to be deepened with increasing the atomic number of M, in the order of Mn, Fe, Co, and Ni.

Original languageEnglish
Article number252102
JournalApplied Physics Letters
Volume90
Issue number25
DOIs
Publication statusPublished - 2007 Aug 2

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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