Abstract
Pentacene thin films were grown by vacuum evaporation method. The structural properties of the films were characterized by X-ray diffraction and atomic force microscopy. Carrier transport characteristics of pentacene thin film transistors were investigated in terms of the field-dependent mobility. It was found in X-ray diffraction analysis that moderate thermal treatment significantly improved the film quality, but little modification was observed under the atomic force microscope and the electrical characteristics measurement. Thus, it can be concluded that it is of great importance to control the surface conditions and the early stage of film growth.
| Original language | English |
|---|---|
| Pages (from-to) | 2767-2769 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 41 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - 2002 Apr |
| Externally published | Yes |
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Keywords
- Carrier transport
- Grain boundary
- Mobility
- Molecular ordering
- Pentacene
- TFT
- Thermal treatment
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Field-dependent mobility of highly oriented pentacene thin-film transistors. / Komoda, Taiki; Endo, Yasuhiro; Kyuno, Kentaro; Toriumi, Akira.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 4 B, 04.2002, p. 2767-2769.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Field-dependent mobility of highly oriented pentacene thin-film transistors
AU - Komoda, Taiki
AU - Endo, Yasuhiro
AU - Kyuno, Kentaro
AU - Toriumi, Akira
PY - 2002/4
Y1 - 2002/4
N2 - Pentacene thin films were grown by vacuum evaporation method. The structural properties of the films were characterized by X-ray diffraction and atomic force microscopy. Carrier transport characteristics of pentacene thin film transistors were investigated in terms of the field-dependent mobility. It was found in X-ray diffraction analysis that moderate thermal treatment significantly improved the film quality, but little modification was observed under the atomic force microscope and the electrical characteristics measurement. Thus, it can be concluded that it is of great importance to control the surface conditions and the early stage of film growth.
AB - Pentacene thin films were grown by vacuum evaporation method. The structural properties of the films were characterized by X-ray diffraction and atomic force microscopy. Carrier transport characteristics of pentacene thin film transistors were investigated in terms of the field-dependent mobility. It was found in X-ray diffraction analysis that moderate thermal treatment significantly improved the film quality, but little modification was observed under the atomic force microscope and the electrical characteristics measurement. Thus, it can be concluded that it is of great importance to control the surface conditions and the early stage of film growth.
KW - Carrier transport
KW - Grain boundary
KW - Mobility
KW - Molecular ordering
KW - Pentacene
KW - TFT
KW - Thermal treatment
UR - http://www.scopus.com/inward/record.url?scp=0042058343&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0042058343&partnerID=8YFLogxK
U2 - 10.1143/JJAP.41.2767
DO - 10.1143/JJAP.41.2767
M3 - Article
AN - SCOPUS:0042058343
VL - 41
SP - 2767
EP - 2769
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -