Field-dependent mobility of highly oriented pentacene thin-film transistors

Taiki Komoda, Yasuhiro Endo, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Pentacene thin films were grown by vacuum evaporation method. The structural properties of the films were characterized by X-ray diffraction and atomic force microscopy. Carrier transport characteristics of pentacene thin film transistors were investigated in terms of the field-dependent mobility. It was found in X-ray diffraction analysis that moderate thermal treatment significantly improved the film quality, but little modification was observed under the atomic force microscope and the electrical characteristics measurement. Thus, it can be concluded that it is of great importance to control the surface conditions and the early stage of film growth.

Original languageEnglish
Pages (from-to)2767-2769
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number4 B
DOIs
Publication statusPublished - 2002 Apr
Externally publishedYes

Fingerprint

Thin film transistors
transistors
Vacuum evaporation
Carrier transport
Film growth
thin films
X ray diffraction analysis
Structural properties
Atomic force microscopy
Microscopes
Heat treatment
diffraction
X ray diffraction
Thin films
x rays
microscopes
evaporation
atomic force microscopy
vacuum

Keywords

  • Carrier transport
  • Grain boundary
  • Mobility
  • Molecular ordering
  • Pentacene
  • TFT
  • Thermal treatment

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Field-dependent mobility of highly oriented pentacene thin-film transistors. / Komoda, Taiki; Endo, Yasuhiro; Kyuno, Kentaro; Toriumi, Akira.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 4 B, 04.2002, p. 2767-2769.

Research output: Contribution to journalArticle

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