Fluorinated SiO 2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

The use of fluorinated SiO 2 films as interlayer dielectrics in ULSI multilevel interconnections was evaluated. The films need to meet the following requirements: low dielectric constant; high planarization capability; high narrow gap filling capability; and low deposition temperature. The technologies investigated were: a fluorinated SiO 2 film by room temperature chemical vapor deposition (RTCVD-SiOF) using fluorotialkoxysilane (FTAS) and pure water as gas sources; a room temperature liquid phase deposition (LPD) SiO 2 film; and a fluorinated spin-on-glass film by fluorotrialkoxysilane vapor treatment (FAST-SOG).

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC.Robert Sundahl, King-Ning Tu, A.Kenneth Jackson, Peter Borgesen
PublisherMaterials Research Society
Pages239-248
Number of pages10
Volume381
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the Spring Meeting on MRS - San Francisco, CA, USA
Duration: 1995 Apr 171995 Apr 20

Other

OtherProceedings of the Spring Meeting on MRS
CitySan Francisco, CA, USA
Period95/4/1795/4/20

Fingerprint

Temperature
Chemical vapor deposition
Permittivity
Gases
Vapors
Glass
Water
Liquids

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Homma, T. (1995). Fluorinated SiO 2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections In C. R. Sundahl, K-N. Tu, A. K. Jackson, & P. Borgesen (Eds.), Materials Research Society Symposium - Proceedings (Vol. 381, pp. 239-248). Materials Research Society.

Fluorinated SiO 2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections . / Homma, Tetsuya.

Materials Research Society Symposium - Proceedings. ed. / C.Robert Sundahl; King-Ning Tu; A.Kenneth Jackson; Peter Borgesen. Vol. 381 Materials Research Society, 1995. p. 239-248.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Homma, T 1995, Fluorinated SiO 2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections in CR Sundahl, K-N Tu, AK Jackson & P Borgesen (eds), Materials Research Society Symposium - Proceedings. vol. 381, Materials Research Society, pp. 239-248, Proceedings of the Spring Meeting on MRS, San Francisco, CA, USA, 95/4/17.
Homma T. Fluorinated SiO 2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections In Sundahl CR, Tu K-N, Jackson AK, Borgesen P, editors, Materials Research Society Symposium - Proceedings. Vol. 381. Materials Research Society. 1995. p. 239-248
Homma, Tetsuya. / Fluorinated SiO 2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections Materials Research Society Symposium - Proceedings. editor / C.Robert Sundahl ; King-Ning Tu ; A.Kenneth Jackson ; Peter Borgesen. Vol. 381 Materials Research Society, 1995. pp. 239-248
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