Fluorinated SiO 2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections

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Abstract

The use of fluorinated SiO 2 films as interlayer dielectrics in ULSI multilevel interconnections was evaluated. The films need to meet the following requirements: low dielectric constant; high planarization capability; high narrow gap filling capability; and low deposition temperature. The technologies investigated were: a fluorinated SiO 2 film by room temperature chemical vapor deposition (RTCVD-SiOF) using fluorotialkoxysilane (FTAS) and pure water as gas sources; a room temperature liquid phase deposition (LPD) SiO 2 film; and a fluorinated spin-on-glass film by fluorotrialkoxysilane vapor treatment (FAST-SOG).

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC.Robert Sundahl, King-Ning Tu, A.Kenneth Jackson, Peter Borgesen
PublisherMaterials Research Society
Pages239-248
Number of pages10
Volume381
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the Spring Meeting on MRS - San Francisco, CA, USA
Duration: 1995 Apr 171995 Apr 20

Other

OtherProceedings of the Spring Meeting on MRS
CitySan Francisco, CA, USA
Period95/4/1795/4/20

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Homma, T. (1995). Fluorinated SiO 2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections In C. R. Sundahl, K-N. Tu, A. K. Jackson, & P. Borgesen (Eds.), Materials Research Society Symposium - Proceedings (Vol. 381, pp. 239-248). Materials Research Society.