Fluorinated SiO2 Films for Interlayer Dielectrics in Quartermicron Multilevel Interconnections

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	239-248
Journal	Low-Dielectric Constant Materials - Synthesis and Applications in Microelectronics, Proceedings Volume
Volume	381
Publication status	Published - 1995 Jan 1

Cite this

@article{9303bfce3d1d41c780cc5bd6bd82962e,

title = "Fluorinated SiO2 Films for Interlayer Dielectrics in Quartermicron Multilevel Interconnections",

author = "T. Homma",

year = "1995",

month = jan,

day = "1",

language = "English",

volume = "381",

pages = "239--248",

journal = "Low-Dielectric Constant Materials - Synthesis and Applications in Microelectronics, Proceedings Volume",

}

TY - JOUR

T1 - Fluorinated SiO2 Films for Interlayer Dielectrics in Quartermicron Multilevel Interconnections

AU - Homma, T.

PY - 1995/1/1

Y1 - 1995/1/1

M3 - Article

VL - 381

SP - 239

EP - 248

JO - Low-Dielectric Constant Materials - Synthesis and Applications in Microelectronics, Proceedings Volume

JF - Low-Dielectric Constant Materials - Synthesis and Applications in Microelectronics, Proceedings Volume

ER -