Fluorinated SiO2 Films for Interlayer Dielectrics in Quartermicron Multilevel Interconnections

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)239-248
JournalLow-Dielectric Constant Materials - Synthesis and Applications in Microelectronics, Proceedings Volume
Volume381
Publication statusPublished - 1995 Jan 1

Cite this

@article{9303bfce3d1d41c780cc5bd6bd82962e,
title = "Fluorinated SiO2 Films for Interlayer Dielectrics in Quartermicron Multilevel Interconnections",
author = "T. Homma",
year = "1995",
month = "1",
day = "1",
language = "English",
volume = "381",
pages = "239--248",
journal = "Low-Dielectric Constant Materials - Synthesis and Applications in Microelectronics, Proceedings Volume",

}

TY - JOUR

T1 - Fluorinated SiO2 Films for Interlayer Dielectrics in Quartermicron Multilevel Interconnections

AU - Homma, T.

PY - 1995/1/1

Y1 - 1995/1/1

M3 - Article

VL - 381

SP - 239

EP - 248

JO - Low-Dielectric Constant Materials - Synthesis and Applications in Microelectronics, Proceedings Volume

JF - Low-Dielectric Constant Materials - Synthesis and Applications in Microelectronics, Proceedings Volume

ER -