Fluorinated SiO2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections

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Abstract

The use of fluorinated SiO2 films as interlayer dielectrics in ULSI multilevel interconnections was evaluated. The films need to meet the following requirements: low dielectric constant; high planarization capability; high narrow gap filling capability; and low deposition temperature. The technologies investigated were: a fluorinated SiO2 film by room temperature chemical vapor deposition (RTCVD-SiOF) using fluorotialkoxysilane (FTAS) and pure water as gas sources; a room temperature liquid phase deposition (LPD) SiO2 film; and a fluorinated spin-on-glass film by fluorotrialkoxysilane vapor treatment (FAST-SOG).

Original languageEnglish
Pages (from-to)239-248
Number of pages10
JournalMaterials Research Society Symposium - Proceedings
Volume381
Publication statusPublished - 1995 Jan 1
EventProceedings of the Spring Meeting on MRS - San Francisco, CA, USA
Duration: 1995 Apr 171995 Apr 20

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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