Fluorinated SiO2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections

Tetsuya Homma

doi:10.1557/proc-381-239

Fluorinated SiO₂ films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections

Tetsuya Homma

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

The use of fluorinated SiO₂ films as interlayer dielectrics in ULSI multilevel interconnections was evaluated. The films need to meet the following requirements: low dielectric constant; high planarization capability; high narrow gap filling capability; and low deposition temperature. The technologies investigated were: a fluorinated SiO₂ film by room temperature chemical vapor deposition (RTCVD-SiOF) using fluorotialkoxysilane (FTAS) and pure water as gas sources; a room temperature liquid phase deposition (LPD) SiO₂ film; and a fluorinated spin-on-glass film by fluorotrialkoxysilane vapor treatment (FAST-SOG).

Original language	English
Pages (from-to)	239-248
Number of pages	10
Journal	Materials Research Society Symposium - Proceedings
Volume	381
DOIs	https://doi.org/10.1557/proc-381-239
Publication status	Published - 1995 Jan 1
Externally published	Yes
Event	Proceedings of the Spring Meeting on MRS - San Francisco, CA, USA Duration: 1995 Apr 17 → 1995 Apr 20

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Fluorinated SiO2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections",

abstract = "The use of fluorinated SiO2 films as interlayer dielectrics in ULSI multilevel interconnections was evaluated. The films need to meet the following requirements: low dielectric constant; high planarization capability; high narrow gap filling capability; and low deposition temperature. The technologies investigated were: a fluorinated SiO2 film by room temperature chemical vapor deposition (RTCVD-SiOF) using fluorotialkoxysilane (FTAS) and pure water as gas sources; a room temperature liquid phase deposition (LPD) SiO2 film; and a fluorinated spin-on-glass film by fluorotrialkoxysilane vapor treatment (FAST-SOG).",

author = "Tetsuya Homma",

year = "1995",

month = jan,

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doi = "10.1557/proc-381-239",

language = "English",

volume = "381",

pages = "239--248",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

note = "Proceedings of the Spring Meeting on MRS ; Conference date: 17-04-1995 Through 20-04-1995",

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AU - Homma, Tetsuya

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Y1 - 1995/1/1

N2 - The use of fluorinated SiO2 films as interlayer dielectrics in ULSI multilevel interconnections was evaluated. The films need to meet the following requirements: low dielectric constant; high planarization capability; high narrow gap filling capability; and low deposition temperature. The technologies investigated were: a fluorinated SiO2 film by room temperature chemical vapor deposition (RTCVD-SiOF) using fluorotialkoxysilane (FTAS) and pure water as gas sources; a room temperature liquid phase deposition (LPD) SiO2 film; and a fluorinated spin-on-glass film by fluorotrialkoxysilane vapor treatment (FAST-SOG).

AB - The use of fluorinated SiO2 films as interlayer dielectrics in ULSI multilevel interconnections was evaluated. The films need to meet the following requirements: low dielectric constant; high planarization capability; high narrow gap filling capability; and low deposition temperature. The technologies investigated were: a fluorinated SiO2 film by room temperature chemical vapor deposition (RTCVD-SiOF) using fluorotialkoxysilane (FTAS) and pure water as gas sources; a room temperature liquid phase deposition (LPD) SiO2 film; and a fluorinated spin-on-glass film by fluorotrialkoxysilane vapor treatment (FAST-SOG).

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JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the Spring Meeting on MRS

Y2 - 17 April 1995 through 20 April 1995

ER -

Fluorinated SiO₂ films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections

Abstract

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