Flux-based approach to HBT device modeling

Shin ichi Tanaka, Mark S. Lundstrom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages505-508
Number of pages4
ISBN (Print)0780314506
Publication statusPublished - 1993 Dec 1
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 1993 Dec 51993 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period93/12/593/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Tanaka, S. I., & Lundstrom, M. S. (1993). Flux-based approach to HBT device modeling. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 505-508). (Technical Digest - International Electron Devices Meeting). Publ by IEEE.