Abstract
We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.
| Original language | English |
|---|---|
| Title of host publication | Technical Digest - International Electron Devices Meeting |
| Editors | Anon |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | Publ by IEEE |
| Pages | 505-508 |
| Number of pages | 4 |
| ISBN (Print) | 0780314506 |
| Publication status | Published - 1993 |
| Externally published | Yes |
| Event | Proceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA Duration: 1993 Dec 5 → 1993 Dec 8 |
Other
| Other | Proceedings of the 1993 IEEE International Electron Devices Meeting |
|---|---|
| City | Washington, DC, USA |
| Period | 93/12/5 → 93/12/8 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Flux-based approach to HBT device modeling. / Tanaka, Shinichi; Lundstrom, Mark S.
Technical Digest - International Electron Devices Meeting. ed. / Anon. Piscataway, NJ, United States : Publ by IEEE, 1993. p. 505-508.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Flux-based approach to HBT device modeling
AU - Tanaka, Shinichi
AU - Lundstrom, Mark S.
PY - 1993
Y1 - 1993
N2 - We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.
AB - We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.
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UR - http://www.scopus.com/inward/citedby.url?scp=0027879331&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0027879331
SN - 0780314506
SP - 505
EP - 508
BT - Technical Digest - International Electron Devices Meeting
A2 - Anon, null
PB - Publ by IEEE
CY - Piscataway, NJ, United States
ER -