Flux-based approach to HBT device modeling

Shin ichi Tanaka; Mark S. Lundstrom

Flux-based approach to HBT device modeling

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.

Original language	English
Title of host publication	Technical Digest - International Electron Devices Meeting
Editors	Anon
Publisher	Publ by IEEE
Pages	505-508
Number of pages	4
ISBN (Print)	0780314506
Publication status	Published - 1993 Dec 1
Externally published	Yes
Event	Proceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA Duration: 1993 Dec 5 → 1993 Dec 8

Publication series

Name	Technical Digest - International Electron Devices Meeting
ISSN (Print)	0163-1918

Other

Other	Proceedings of the 1993 IEEE International Electron Devices Meeting
City	Washington, DC, USA
Period	93/12/5 → 93/12/8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Cite this

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title = "Flux-based approach to HBT device modeling",

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AB - We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.

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