Abstract
We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.
| Original language | English |
|---|---|
| Title of host publication | Technical Digest - International Electron Devices Meeting |
| Editors | Anon |
| Publisher | Publ by IEEE |
| Pages | 505-508 |
| Number of pages | 4 |
| ISBN (Print) | 0780314506 |
| Publication status | Published - 1993 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA Duration: 1993 Dec 5 → 1993 Dec 8 |
Publication series
| Name | Technical Digest - International Electron Devices Meeting |
|---|---|
| ISSN (Print) | 0163-1918 |
Other
| Other | Proceedings of the 1993 IEEE International Electron Devices Meeting |
|---|---|
| City | Washington, DC, USA |
| Period | 93/12/5 → 93/12/8 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Tanaka, S. I., & Lundstrom, M. S. (1993). Flux-based approach to HBT device modeling. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 505-508). (Technical Digest - International Electron Devices Meeting). Publ by IEEE.