TY - GEN
T1 - Flux-based approach to HBT device modeling
AU - Tanaka, Shin ichi
AU - Lundstrom, Mark S.
PY - 1993/12/1
Y1 - 1993/12/1
N2 - We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.
AB - We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.
UR - http://www.scopus.com/inward/record.url?scp=0027879331&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027879331&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0027879331
SN - 0780314506
T3 - Technical Digest - International Electron Devices Meeting
SP - 505
EP - 508
BT - Technical Digest - International Electron Devices Meeting
A2 - Anon, null
PB - Publ by IEEE
T2 - Proceedings of the 1993 IEEE International Electron Devices Meeting
Y2 - 5 December 1993 through 8 December 1993
ER -