Flux-based approach to HBT device modeling

Shin ichi Tanaka, Mark S. Lundstrom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Number of pages4
ISBN (Print)0780314506
Publication statusPublished - 1993 Dec 1
Externally publishedYes
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 1993 Dec 51993 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918


OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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