Flux-based approach to HBT device modeling

Shinichi Tanaka, Mark S. Lundstrom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages505-508
Number of pages4
ISBN (Print)0780314506
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 1993 Dec 51993 Dec 8

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period93/12/593/12/8

Fingerprint

Heterojunction bipolar transistors
Fluxes
Carrier transport
Boltzmann equation
Physics
Scattering
Experiments

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tanaka, S., & Lundstrom, M. S. (1993). Flux-based approach to HBT device modeling. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 505-508). Piscataway, NJ, United States: Publ by IEEE.

Flux-based approach to HBT device modeling. / Tanaka, Shinichi; Lundstrom, Mark S.

Technical Digest - International Electron Devices Meeting. ed. / Anon. Piscataway, NJ, United States : Publ by IEEE, 1993. p. 505-508.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanaka, S & Lundstrom, MS 1993, Flux-based approach to HBT device modeling. in Anon (ed.), Technical Digest - International Electron Devices Meeting. Publ by IEEE, Piscataway, NJ, United States, pp. 505-508, Proceedings of the 1993 IEEE International Electron Devices Meeting, Washington, DC, USA, 93/12/5.
Tanaka S, Lundstrom MS. Flux-based approach to HBT device modeling. In Anon, editor, Technical Digest - International Electron Devices Meeting. Piscataway, NJ, United States: Publ by IEEE. 1993. p. 505-508
Tanaka, Shinichi ; Lundstrom, Mark S. / Flux-based approach to HBT device modeling. Technical Digest - International Electron Devices Meeting. editor / Anon. Piscataway, NJ, United States : Publ by IEEE, 1993. pp. 505-508
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