Flux-based study of carrier transport in thin-base diodes and transistors

Shinichi Tanaka, Mark S. Lundstrom

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Carrier transport in pn-junction is re-examined using McKelvey's flux method. A simple but physically based treatment of carrier transport leads to new expressions for the 'law of the junction,' quasi-Fermi level, I-V characteristics, base transit time, and probability of carrier backscattering from the space charge region, which are valid from the ballistic through the diffusive regimes. Comparison with Monte Carlo simulation shows that the deduced backscattering rate well describes the bias dependence. For silicon pn-junctions, the backscattering rate under reverse bias conditions is less than 5%, satisfying the Bethe condition of thermionic emission, while it rapidly increases with forward bias until drift-diffusion governs the transport. The effect of thin-base transport and backscattering on the current, carrier velocity, and distribution function is also investigated. It is found that for a base thickness less than 50 nm even silicon transistors enter the quasi-ballistic transport regime. These results should prove useful not only for fundamental understanding of the pn-junction transport, but also for careful design of advanced transistors.

Original languageEnglish
Pages (from-to)1806-1815
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume42
Issue number10
DOIs
Publication statusPublished - 1995 Oct
Externally publishedYes

Fingerprint

Carrier transport
Backscattering
backscattering
Transistors
Diodes
transistors
diodes
Fluxes
Silicon
Ballistics
ballistics
silicon junctions
silicon transistors
Thermionic emission
thermionic emission
transit time
Fermi level
Electric space charge
Distribution functions
space charge

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Flux-based study of carrier transport in thin-base diodes and transistors. / Tanaka, Shinichi; Lundstrom, Mark S.

In: IEEE Transactions on Electron Devices, Vol. 42, No. 10, 10.1995, p. 1806-1815.

Research output: Contribution to journalArticle

@article{7ad7c05438344fa19af455d46886ed22,
title = "Flux-based study of carrier transport in thin-base diodes and transistors",
abstract = "Carrier transport in pn-junction is re-examined using McKelvey's flux method. A simple but physically based treatment of carrier transport leads to new expressions for the 'law of the junction,' quasi-Fermi level, I-V characteristics, base transit time, and probability of carrier backscattering from the space charge region, which are valid from the ballistic through the diffusive regimes. Comparison with Monte Carlo simulation shows that the deduced backscattering rate well describes the bias dependence. For silicon pn-junctions, the backscattering rate under reverse bias conditions is less than 5{\%}, satisfying the Bethe condition of thermionic emission, while it rapidly increases with forward bias until drift-diffusion governs the transport. The effect of thin-base transport and backscattering on the current, carrier velocity, and distribution function is also investigated. It is found that for a base thickness less than 50 nm even silicon transistors enter the quasi-ballistic transport regime. These results should prove useful not only for fundamental understanding of the pn-junction transport, but also for careful design of advanced transistors.",
author = "Shinichi Tanaka and Lundstrom, {Mark S.}",
year = "1995",
month = "10",
doi = "10.1109/16.464415",
language = "English",
volume = "42",
pages = "1806--1815",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

TY - JOUR

T1 - Flux-based study of carrier transport in thin-base diodes and transistors

AU - Tanaka, Shinichi

AU - Lundstrom, Mark S.

PY - 1995/10

Y1 - 1995/10

N2 - Carrier transport in pn-junction is re-examined using McKelvey's flux method. A simple but physically based treatment of carrier transport leads to new expressions for the 'law of the junction,' quasi-Fermi level, I-V characteristics, base transit time, and probability of carrier backscattering from the space charge region, which are valid from the ballistic through the diffusive regimes. Comparison with Monte Carlo simulation shows that the deduced backscattering rate well describes the bias dependence. For silicon pn-junctions, the backscattering rate under reverse bias conditions is less than 5%, satisfying the Bethe condition of thermionic emission, while it rapidly increases with forward bias until drift-diffusion governs the transport. The effect of thin-base transport and backscattering on the current, carrier velocity, and distribution function is also investigated. It is found that for a base thickness less than 50 nm even silicon transistors enter the quasi-ballistic transport regime. These results should prove useful not only for fundamental understanding of the pn-junction transport, but also for careful design of advanced transistors.

AB - Carrier transport in pn-junction is re-examined using McKelvey's flux method. A simple but physically based treatment of carrier transport leads to new expressions for the 'law of the junction,' quasi-Fermi level, I-V characteristics, base transit time, and probability of carrier backscattering from the space charge region, which are valid from the ballistic through the diffusive regimes. Comparison with Monte Carlo simulation shows that the deduced backscattering rate well describes the bias dependence. For silicon pn-junctions, the backscattering rate under reverse bias conditions is less than 5%, satisfying the Bethe condition of thermionic emission, while it rapidly increases with forward bias until drift-diffusion governs the transport. The effect of thin-base transport and backscattering on the current, carrier velocity, and distribution function is also investigated. It is found that for a base thickness less than 50 nm even silicon transistors enter the quasi-ballistic transport regime. These results should prove useful not only for fundamental understanding of the pn-junction transport, but also for careful design of advanced transistors.

UR - http://www.scopus.com/inward/record.url?scp=0029391688&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029391688&partnerID=8YFLogxK

U2 - 10.1109/16.464415

DO - 10.1109/16.464415

M3 - Article

VL - 42

SP - 1806

EP - 1815

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -