Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates

M. Hao, Hiroyasu Ishikawa, T. Egawa

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The growth of high-quality GaN films on sapphire substrates with high-density nanocraters was investigated. The nanocraters were formed on the surface of the substrates in situ a MOCVD reactor by GaN decomposition induced etching. The scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction (XRD), Hall measurement and photoluminescence (PL) analysis were used for the characterization of the films. It was observed that the decomposition of GaN induced the decomposition of sapphire, which resulted in the formation of high density nanocraters on its surface.

Original languageEnglish
Pages (from-to)4041-4043
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number20
DOIs
Publication statusPublished - 2004 May 17
Externally publishedYes

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sapphire
etching
chemistry
decomposition
metalorganic chemical vapor deposition
x ray diffraction
reactors
atomic force microscopy
photoluminescence
scanning electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The growth of high-quality GaN films on sapphire substrates with high-density nanocraters was investigated. The nanocraters were formed on the surface of the substrates in situ a MOCVD reactor by GaN decomposition induced etching. The scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction (XRD), Hall measurement and photoluminescence (PL) analysis were used for the characterization of the films. It was observed that the decomposition of GaN induced the decomposition of sapphire, which resulted in the formation of high density nanocraters on its surface.",
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T1 - Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates

AU - Hao, M.

AU - Ishikawa, Hiroyasu

AU - Egawa, T.

PY - 2004/5/17

Y1 - 2004/5/17

N2 - The growth of high-quality GaN films on sapphire substrates with high-density nanocraters was investigated. The nanocraters were formed on the surface of the substrates in situ a MOCVD reactor by GaN decomposition induced etching. The scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction (XRD), Hall measurement and photoluminescence (PL) analysis were used for the characterization of the films. It was observed that the decomposition of GaN induced the decomposition of sapphire, which resulted in the formation of high density nanocraters on its surface.

AB - The growth of high-quality GaN films on sapphire substrates with high-density nanocraters was investigated. The nanocraters were formed on the surface of the substrates in situ a MOCVD reactor by GaN decomposition induced etching. The scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction (XRD), Hall measurement and photoluminescence (PL) analysis were used for the characterization of the films. It was observed that the decomposition of GaN induced the decomposition of sapphire, which resulted in the formation of high density nanocraters on its surface.

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