Formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO2

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, Yoshimichi Ohki

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The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers.

Original languageEnglish
Pages (from-to)9-19
Number of pages11
JournalElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
Issue number3
Publication statusPublished - 1997 Jan 1



  • Amorphous SiO
  • Electron spin resonance
  • Excimer laser: Co γ ray
  • Mechanical stress
  • Optical absorption
  • Paramagnetic defect center

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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