Formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO2

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, Yoshimichi Ohki

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers.

Original languageEnglish
Pages (from-to)9-19
Number of pages11
JournalElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
Volume121
Issue number3
Publication statusPublished - 1997
Externally publishedYes

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Excimer lasers
Gamma rays
Defects
Lasers

Keywords

  • Amorphous SiO
  • Electron spin resonance
  • Excimer laser: Co γ ray
  • Mechanical stress
  • Optical absorption
  • Paramagnetic defect center

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

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abstract = "The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers.",
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author = "Hiroyuki Nishikawa and Eiki Watanabe and Daisuke Ito and Yoshimichi Ohki",
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T1 - Formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO2

AU - Nishikawa, Hiroyuki

AU - Watanabe, Eiki

AU - Ito, Daisuke

AU - Ohki, Yoshimichi

PY - 1997

Y1 - 1997

N2 - The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers.

AB - The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers.

KW - Amorphous SiO

KW - Electron spin resonance

KW - Excimer laser: Co γ ray

KW - Mechanical stress

KW - Optical absorption

KW - Paramagnetic defect center

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